Thermal stability of the aluminum/titanium carbide/silicon contact system

M. Eizenberg; R. Brener; S. P. Murarka

doi:10.1063/1.332888

Thermal stability of the aluminum/titanium carbide/silicon contact system

M. Eizenberg^*, R. Brener, S. P. Murarka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The thermal stability of Al thin films on titanium carbide (Ti _xC, where x defines the atomic ratio Ti/C) films reactively sputter deposited on Si substrate has been studied using Auger electron spectroscopy and x-ray diffraction. The stability of the deposited structure increases with increasing carbon content in the Ti_xC films. However, an enhanced stability is obtained for a Ti_3.1C film that is preannealed at 750°C for 30 min to induce a phase separation to a titanium silicide inner layer and a Ti_xC outer layer prior to Al deposition. Such a film with an Al top layer maintains its structure even following 550°C-30 min heat treatment. The lower temperature (500°C) failure observed in other cases results from severe intermixing of layers and the formation of the ternary compound Ti₇Al₅Si₁₂, whereas failures observed at 600°C result from similar intermixing and formation of the compound Al₄C₃, indicating the decomposition of TiC.

Original language	English
Pages (from-to)	3799-3803
Number of pages	5
Journal	Journal of Applied Physics
Volume	55
Issue number	10
DOIs	https://doi.org/10.1063/1.332888
State	Published - 1984
Externally published	Yes

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@article{8e0eb373b5584da0bcfb9445cdbb7815,

title = "Thermal stability of the aluminum/titanium carbide/silicon contact system",

abstract = "The thermal stability of Al thin films on titanium carbide (Ti xC, where x defines the atomic ratio Ti/C) films reactively sputter deposited on Si substrate has been studied using Auger electron spectroscopy and x-ray diffraction. The stability of the deposited structure increases with increasing carbon content in the TixC films. However, an enhanced stability is obtained for a Ti3.1C film that is preannealed at 750°C for 30 min to induce a phase separation to a titanium silicide inner layer and a TixC outer layer prior to Al deposition. Such a film with an Al top layer maintains its structure even following 550°C-30 min heat treatment. The lower temperature (500°C) failure observed in other cases results from severe intermixing of layers and the formation of the ternary compound Ti7Al5Si12, whereas failures observed at 600°C result from similar intermixing and formation of the compound Al4C3, indicating the decomposition of TiC.",

author = "M. Eizenberg and R. Brener and Murarka, {S. P.}",

year = "1984",

doi = "10.1063/1.332888",

language = "英语",

volume = "55",

pages = "3799--3803",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Thermal stability of the aluminum/titanium carbide/silicon contact system

AU - Eizenberg, M.

AU - Brener, R.

AU - Murarka, S. P.

PY - 1984

Y1 - 1984

N2 - The thermal stability of Al thin films on titanium carbide (Ti xC, where x defines the atomic ratio Ti/C) films reactively sputter deposited on Si substrate has been studied using Auger electron spectroscopy and x-ray diffraction. The stability of the deposited structure increases with increasing carbon content in the TixC films. However, an enhanced stability is obtained for a Ti3.1C film that is preannealed at 750°C for 30 min to induce a phase separation to a titanium silicide inner layer and a TixC outer layer prior to Al deposition. Such a film with an Al top layer maintains its structure even following 550°C-30 min heat treatment. The lower temperature (500°C) failure observed in other cases results from severe intermixing of layers and the formation of the ternary compound Ti7Al5Si12, whereas failures observed at 600°C result from similar intermixing and formation of the compound Al4C3, indicating the decomposition of TiC.

AB - The thermal stability of Al thin films on titanium carbide (Ti xC, where x defines the atomic ratio Ti/C) films reactively sputter deposited on Si substrate has been studied using Auger electron spectroscopy and x-ray diffraction. The stability of the deposited structure increases with increasing carbon content in the TixC films. However, an enhanced stability is obtained for a Ti3.1C film that is preannealed at 750°C for 30 min to induce a phase separation to a titanium silicide inner layer and a TixC outer layer prior to Al deposition. Such a film with an Al top layer maintains its structure even following 550°C-30 min heat treatment. The lower temperature (500°C) failure observed in other cases results from severe intermixing of layers and the formation of the ternary compound Ti7Al5Si12, whereas failures observed at 600°C result from similar intermixing and formation of the compound Al4C3, indicating the decomposition of TiC.

UR - http://www.scopus.com/inward/record.url?scp=0021424174&partnerID=8YFLogxK

U2 - 10.1063/1.332888

DO - 10.1063/1.332888

M3 - 文章

AN - SCOPUS:0021424174

SN - 0021-8979

VL - 55

SP - 3799

EP - 3803

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Thermal stability of the aluminum/titanium carbide/silicon contact system

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