Thermal stability of pt/epitaxial Gd2O3/Si stacks

E. Lipp; M. Eizenberg; M. Czernohorsky; H. J. Osten

Thermal stability of pt/epitaxial Gd₂O₃/Si stacks

E. Lipp^*, M. Eizenberg, M. Czernohorsky, H. J. Osten

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies
Pages	64-69
Number of pages	6
State	Published - 2007
Externally published	Yes
Event	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting - San Francisco, CA, United States Duration: 9 Apr 2007 → 13 Apr 2007

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	996
ISSN (Print)	0272-9172

Conference

Conference	Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	9/04/07 → 13/04/07

Cite this

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title = "Thermal stability of pt/epitaxial Gd2O3/Si stacks",

abstract = "The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively",

author = "E. Lipp and M. Eizenberg and M. Czernohorsky and Osten, {H. J.}",

year = "2007",

language = "英语",

isbn = "9781605604282",

series = "Materials Research Society Symposium Proceedings",

pages = "64--69",

booktitle = "Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies",

note = "null ; Conference date: 09-04-2007 Through 13-04-2007",

}

Lipp, E, Eizenberg, M, Czernohorsky, M & Osten, HJ 2007, Thermal stability of pt/epitaxial Gd₂O₃/Si stacks. in Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. Materials Research Society Symposium Proceedings, vol. 996, pp. 64-69, Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies - 2007 MRS Spring Meeting, San Francisco, CA, United States, 9/04/07.

Thermal stability of pt/epitaxial Gd₂O₃/Si stacks. / Lipp, E.; Eizenberg, M.; Czernohorsky, M. et al.

Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies. 2007. p. 64-69 (Materials Research Society Symposium Proceedings; Vol. 996).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal stability of pt/epitaxial Gd2O3/Si stacks

AU - Lipp, E.

AU - Eizenberg, M.

AU - Czernohorsky, M.

AU - Osten, H. J.

PY - 2007

Y1 - 2007

N2 - The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively

AB - The thermal stability of Pt/ epitaxial Gd2O3/ Si(100) stacks is studied as function of temperature in the range 400-650°C. Following 30min anneal at 600□ C, a significant increase in oxide leakage current is measured. We show that oxide degradation is not accompanied by chemical reactions at the oxide/Si or metal/ oxide interfaces but is rather induced by formation of Gd vacancies, due to Gd out diffusion through the grain boundaries of the Pt layer. Secondary ion mass spectrometry (SMS) measurements show that the stack is stable up to 500□ C, and that significant diffusion of Gd occurs only after 30min at 550□C. A quantitative analysis of the diffusion kinetics between 550□C and 650□C is presented, based on the SMS data. The pre-exponential term and activation energy for grain boundary diffusion of Gd are calculated to be (5±2)-10-10 cm2/sec and (0.67+0.04) eV respectively

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M3 - 会议稿件

AN - SCOPUS:70349935135

SN - 9781605604282

T3 - Materials Research Society Symposium Proceedings

SP - 64

EP - 69

BT - Materials Research Society Symposium Proceedings - Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies

Y2 - 9 April 2007 through 13 April 2007

ER -

Thermal stability of pt/epitaxial Gd₂O₃/Si stacks

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