Thermal stability and electrical properties of Zr/Si_1-x-yGe_xC_y contacts after rapid thermal annealing

TY - JOUR

T1 - Thermal stability and electrical properties of Zr/Si1-x-yGexCy contacts after rapid thermal annealing

AU - Aubry-Fortuna, V.

AU - Eyal, A.

AU - Chaix-Pluchery, O.

AU - Barthula, M.

AU - Meyer, F.

AU - Eizenberg, M.

PY - 1998

Y1 - 1998

N2 - In this work, we have investigated the reaction between Zr and SiGeC alloys. Annealings have been performed in a rapid thermal annealing (RTA) furnace at temperatures ranging from 400 to 800°C for 5 min. The reaction of the metal with the alloy has been investigated by x-ray diffraction and Rutherford backscattering spectrometry. Four crystal x-ray diffraction was performed to measure the residual strain in the epilayer. The analyses indicate that the C49-Zr(Si1-xGex)2 is the final phase of the reaction. For all compositions examined (from 0% up to 33% of Ge), the C49 film has the same Ge content as in the as-deposited Si1-x-yGexCy layer and no Ge segregation has occured. In addition, this thermal treatment leads to only a small strain relaxation in the unreacted epilayer. The presence of C does not modify the reaction and it prevents any strain relaxation. Schottky barrier height measurements have been performed on p-type layers. RTA leads to a slight decrease of the barrier without any degradation of the contact. The C49 film presents a resistivity of about 80 μcm. These results indicate that Zr may be a good candidate for contacts on IV-IV alloys in terms of thermal stability.

AB - In this work, we have investigated the reaction between Zr and SiGeC alloys. Annealings have been performed in a rapid thermal annealing (RTA) furnace at temperatures ranging from 400 to 800°C for 5 min. The reaction of the metal with the alloy has been investigated by x-ray diffraction and Rutherford backscattering spectrometry. Four crystal x-ray diffraction was performed to measure the residual strain in the epilayer. The analyses indicate that the C49-Zr(Si1-xGex)2 is the final phase of the reaction. For all compositions examined (from 0% up to 33% of Ge), the C49 film has the same Ge content as in the as-deposited Si1-x-yGexCy layer and no Ge segregation has occured. In addition, this thermal treatment leads to only a small strain relaxation in the unreacted epilayer. The presence of C does not modify the reaction and it prevents any strain relaxation. Schottky barrier height measurements have been performed on p-type layers. RTA leads to a slight decrease of the barrier without any degradation of the contact. The C49 film presents a resistivity of about 80 μcm. These results indicate that Zr may be a good candidate for contacts on IV-IV alloys in terms of thermal stability.

UR - http://www.scopus.com/inward/record.url?scp=0000807126&partnerID=8YFLogxK

U2 - 10.1063/1.122141

DO - 10.1063/1.122141

M3 - 文章

AN - SCOPUS:0000807126

SN - 0003-6951

VL - 73

SP - 1248

EP - 1250

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -