The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes

Robert Tang-Kong; Roy Winter; Ryan Brock; Jared Tracy; Moshe Eizenberg; Reinhold H. Dauskardt; Paul C. McIntyre

doi:10.1021/acsami.8b13576

The Role of Catalyst Adhesion in ALD-TiO₂ Protection of Water Splitting Silicon Anodes

Robert Tang-Kong, Roy Winter, Ryan Brock, Jared Tracy, Moshe Eizenberg, Reinhold H. Dauskardt, Paul C. McIntyre^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Atomic layer deposited titanium dioxide (ALD-TiO₂) has emerged as an effective protection layer for highly efficient semiconductor anodes which are normally unstable under the potential and pH conditions used to oxidize water in a photoelectrochemical cell. The failure modes of silicon anodes coated with an Ir/IrO_x oxygen evolution catalyst layer are investigated, and poor catalyst/substrate adhesion is found to be a key factor in failed anodes. Quantitative measurements of interfacial adhesion energy show that the addition of TiO₂ significantly improves reliability of anodes, yielding an adhesion energy of 6.02 ± 0.5 J/m², more than double the adhesion energy measured in the absence of an ALD-TiO₂ protection layer. These results indicate the importance of catalyst adhesion to an interposed protection layer in promoting operational stability of high efficiency semiconducting anodes during solar-driven water splitting.

Original language	English
Pages (from-to)	37103-37109
Number of pages	7
Journal	ACS applied materials & interfaces
Volume	10
Issue number	43
DOIs	https://doi.org/10.1021/acsami.8b13576
State	Published - 31 Oct 2018
Externally published	Yes

Keywords

adhesion
atomic layer deposition
failure mode
isotope
water oxidation

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acsami.8b13576

Cite this

@article{64c1ae177d1f47929bd4dddf863c7c96,

title = "The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes",

abstract = "Atomic layer deposited titanium dioxide (ALD-TiO2) has emerged as an effective protection layer for highly efficient semiconductor anodes which are normally unstable under the potential and pH conditions used to oxidize water in a photoelectrochemical cell. The failure modes of silicon anodes coated with an Ir/IrOx oxygen evolution catalyst layer are investigated, and poor catalyst/substrate adhesion is found to be a key factor in failed anodes. Quantitative measurements of interfacial adhesion energy show that the addition of TiO2 significantly improves reliability of anodes, yielding an adhesion energy of 6.02 ± 0.5 J/m2, more than double the adhesion energy measured in the absence of an ALD-TiO2 protection layer. These results indicate the importance of catalyst adhesion to an interposed protection layer in promoting operational stability of high efficiency semiconducting anodes during solar-driven water splitting.",

keywords = "adhesion, atomic layer deposition, failure mode, isotope, water oxidation",

author = "Robert Tang-Kong and Roy Winter and Ryan Brock and Jared Tracy and Moshe Eizenberg and Dauskardt, {Reinhold H.} and McIntyre, {Paul C.}",

note = "Publisher Copyright: {\textcopyright} 2018 American Chemical Society.",

year = "2018",

month = oct,

day = "31",

doi = "10.1021/acsami.8b13576",

language = "英语",

volume = "10",

pages = "37103--37109",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "43",

}

TY - JOUR

T1 - The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes

AU - Tang-Kong, Robert

AU - Winter, Roy

AU - Brock, Ryan

AU - Tracy, Jared

AU - Eizenberg, Moshe

AU - Dauskardt, Reinhold H.

AU - McIntyre, Paul C.

PY - 2018/10/31

Y1 - 2018/10/31

N2 - Atomic layer deposited titanium dioxide (ALD-TiO2) has emerged as an effective protection layer for highly efficient semiconductor anodes which are normally unstable under the potential and pH conditions used to oxidize water in a photoelectrochemical cell. The failure modes of silicon anodes coated with an Ir/IrOx oxygen evolution catalyst layer are investigated, and poor catalyst/substrate adhesion is found to be a key factor in failed anodes. Quantitative measurements of interfacial adhesion energy show that the addition of TiO2 significantly improves reliability of anodes, yielding an adhesion energy of 6.02 ± 0.5 J/m2, more than double the adhesion energy measured in the absence of an ALD-TiO2 protection layer. These results indicate the importance of catalyst adhesion to an interposed protection layer in promoting operational stability of high efficiency semiconducting anodes during solar-driven water splitting.

AB - Atomic layer deposited titanium dioxide (ALD-TiO2) has emerged as an effective protection layer for highly efficient semiconductor anodes which are normally unstable under the potential and pH conditions used to oxidize water in a photoelectrochemical cell. The failure modes of silicon anodes coated with an Ir/IrOx oxygen evolution catalyst layer are investigated, and poor catalyst/substrate adhesion is found to be a key factor in failed anodes. Quantitative measurements of interfacial adhesion energy show that the addition of TiO2 significantly improves reliability of anodes, yielding an adhesion energy of 6.02 ± 0.5 J/m2, more than double the adhesion energy measured in the absence of an ALD-TiO2 protection layer. These results indicate the importance of catalyst adhesion to an interposed protection layer in promoting operational stability of high efficiency semiconducting anodes during solar-driven water splitting.

KW - adhesion

KW - atomic layer deposition

KW - failure mode

KW - isotope

KW - water oxidation

UR - http://www.scopus.com/inward/record.url?scp=85055513194&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b13576

DO - 10.1021/acsami.8b13576

M3 - 文章

C2 - 30346686

AN - SCOPUS:85055513194

SN - 1944-8244

VL - 10

SP - 37103

EP - 37109

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 43

ER -