The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs

Chemical Compounds

• Electron Gas 100%
• Electron Trap 90%
• Leakage Current 84%
• Semiconductor 48%
• Voltage 46%
• Reaction Activation Energy 44%
• Electron Particle 34%
• Metal 28%
• Surface 20%

Engineering & Materials Science

• Leakage currents 68%
• Electron traps 59%
• Electron gas 57%
• Heterojunctions 41%
• Field effect transistors 34%
• Surface treatment 33%
• Activation energy 33%
• Electrons 32%
• Transient analysis 30%
• Semiconductor materials 28%
• Transistors 27%
• Metals 20%
• Electric potential 16%