The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs

Shlomo Mehari; Arkady Gavrilov; Moshe Eizenberg; Dan Ritter

doi:10.1109/TED.2016.2620186

The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs

Shlomo Mehari^*, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A tradeoff behavior between low Schottky gate leakage current and improved dynamic stability of AlGaN/GaN heterostructure FETs was previously reported, and was attributed to variations in the metal/semiconductor interface properties. Here, we show that a tradeoff behavior is found in transistors and gated van der Pauw test structures that were fabricated on the same wafer, and underwent identical surface treatments. In the gated van der Pauw measurements, a slow transient response and a large variation in the 2-D electron gas concentration compared with equilibrium were detected, following a gate voltage stress in low leakage devices, but not in high leakage ones. Based upon our experimental observations, we argue that electron traps located in the AlGaN barrier layer are responsible for the tradeoff. The activation energies required to fill the empty barrier traps by electrons, obtained from the gated van der Pauw measurements, are 0.60 and 0.65 eV.

Original language	English
Article number	7733102
Pages (from-to)	4702-4706
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	12
DOIs	https://doi.org/10.1109/TED.2016.2620186
State	Published - Dec 2016
Externally published	Yes

Keywords

AlGaN/GaN heterostructure FET (HFET)
electron trapping effects
hall effect
pulsed I-V
transient response
van der Pauw

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title = "The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs",

abstract = "A tradeoff behavior between low Schottky gate leakage current and improved dynamic stability of AlGaN/GaN heterostructure FETs was previously reported, and was attributed to variations in the metal/semiconductor interface properties. Here, we show that a tradeoff behavior is found in transistors and gated van der Pauw test structures that were fabricated on the same wafer, and underwent identical surface treatments. In the gated van der Pauw measurements, a slow transient response and a large variation in the 2-D electron gas concentration compared with equilibrium were detected, following a gate voltage stress in low leakage devices, but not in high leakage ones. Based upon our experimental observations, we argue that electron traps located in the AlGaN barrier layer are responsible for the tradeoff. The activation energies required to fill the empty barrier traps by electrons, obtained from the gated van der Pauw measurements, are 0.60 and 0.65 eV.",

keywords = "AlGaN/GaN heterostructure FET (HFET), electron trapping effects, hall effect, pulsed I-V, transient response, van der Pauw",

author = "Shlomo Mehari and Arkady Gavrilov and Moshe Eizenberg and Dan Ritter",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2016",

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T1 - The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs

AU - Mehari, Shlomo

AU - Gavrilov, Arkady

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2016/12

Y1 - 2016/12

N2 - A tradeoff behavior between low Schottky gate leakage current and improved dynamic stability of AlGaN/GaN heterostructure FETs was previously reported, and was attributed to variations in the metal/semiconductor interface properties. Here, we show that a tradeoff behavior is found in transistors and gated van der Pauw test structures that were fabricated on the same wafer, and underwent identical surface treatments. In the gated van der Pauw measurements, a slow transient response and a large variation in the 2-D electron gas concentration compared with equilibrium were detected, following a gate voltage stress in low leakage devices, but not in high leakage ones. Based upon our experimental observations, we argue that electron traps located in the AlGaN barrier layer are responsible for the tradeoff. The activation energies required to fill the empty barrier traps by electrons, obtained from the gated van der Pauw measurements, are 0.60 and 0.65 eV.

AB - A tradeoff behavior between low Schottky gate leakage current and improved dynamic stability of AlGaN/GaN heterostructure FETs was previously reported, and was attributed to variations in the metal/semiconductor interface properties. Here, we show that a tradeoff behavior is found in transistors and gated van der Pauw test structures that were fabricated on the same wafer, and underwent identical surface treatments. In the gated van der Pauw measurements, a slow transient response and a large variation in the 2-D electron gas concentration compared with equilibrium were detected, following a gate voltage stress in low leakage devices, but not in high leakage ones. Based upon our experimental observations, we argue that electron traps located in the AlGaN barrier layer are responsible for the tradeoff. The activation energies required to fill the empty barrier traps by electrons, obtained from the gated van der Pauw measurements, are 0.60 and 0.65 eV.

KW - AlGaN/GaN heterostructure FET (HFET)

KW - electron trapping effects

KW - hall effect

KW - pulsed I-V

KW - transient response

KW - van der Pauw

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U2 - 10.1109/TED.2016.2620186

DO - 10.1109/TED.2016.2620186

M3 - 文章

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SN - 0018-9383

VL - 63

SP - 4702

EP - 4706

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 12

M1 - 7733102

ER -

The role of barrier transport and traps in the tradeoff between low OFF-state leakage current and improved dynamic stability of AlGaN/GaN HFETs

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Keywords

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