The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack

R. Winter, I. Krylov, J. Ahn, P. C. McIntyre, M. Eizenberg

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Abstract

The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al 2O3/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.

Original languageEnglish
Article number202103
JournalApplied Physics Letters
Volume104
Issue number20
DOIs
StatePublished - 19 May 2014
Externally publishedYes

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