The effect of carbon on strain relaxation and phase formation in the Ti/Si1-x-yGexCy/Si contact system

A. Eyal; R. Brener; R. Beserman; M. Eizenberg; Z. Atzmon; David J. Smith; J. W. Mayer

doi:10.1063/1.118120

The effect of carbon on strain relaxation and phase formation in the Ti/Si_1-x-yGe_xC_y/Si contact system

A. Eyal^*, R. Brener, R. Beserman, M. Eizenberg, Z. Atzmon, David J. Smith, J. W. Mayer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We report the first study of interfacial reactions of a metal with Si_1-x-yGe_xC_y epitaxially grown on Si. The Ti/Si_1-x-yGe_xC_y/Si (0<y<1.7%) contact system was studied after isochronal heat treatments from 500 to 800°C. The results for Ti/Si_1-xGe_x phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide-germanide phases, and carbon accumulation (probably in the form of TiC) at the silicide-germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide-germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations.

Original language	English
Pages (from-to)	64-66
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	1
DOIs	https://doi.org/10.1063/1.118120
State	Published - 1 Jul 1996
Externally published	Yes

Access to Document

10.1063/1.118120

Cite this

@article{b46907f2157d4c7285c09b06e45ffe4b,

title = "The effect of carbon on strain relaxation and phase formation in the Ti/Si1-x-yGexCy/Si contact system",

abstract = "We report the first study of interfacial reactions of a metal with Si1-x-yGexCy epitaxially grown on Si. The Ti/Si1-x-yGexCy/Si (01-xGex phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide-germanide phases, and carbon accumulation (probably in the form of TiC) at the silicide-germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide-germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations.",

author = "A. Eyal and R. Brener and R. Beserman and M. Eizenberg and Z. Atzmon and Smith, {David J.} and Mayer, {J. W.}",

year = "1996",

month = jul,

day = "1",

doi = "10.1063/1.118120",

language = "英语",

volume = "69",

pages = "64--66",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - The effect of carbon on strain relaxation and phase formation in the Ti/Si1-x-yGexCy/Si contact system

AU - Eyal, A.

AU - Brener, R.

AU - Beserman, R.

AU - Eizenberg, M.

AU - Atzmon, Z.

AU - Smith, David J.

AU - Mayer, J. W.

PY - 1996/7/1

Y1 - 1996/7/1

N2 - We report the first study of interfacial reactions of a metal with Si1-x-yGexCy epitaxially grown on Si. The Ti/Si1-x-yGexCy/Si (01-xGex phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide-germanide phases, and carbon accumulation (probably in the form of TiC) at the silicide-germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide-germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations.

AB - We report the first study of interfacial reactions of a metal with Si1-x-yGexCy epitaxially grown on Si. The Ti/Si1-x-yGexCy/Si (01-xGex phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide-germanide phases, and carbon accumulation (probably in the form of TiC) at the silicide-germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide-germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations.

UR - http://www.scopus.com/inward/record.url?scp=0002981453&partnerID=8YFLogxK

U2 - 10.1063/1.118120

DO - 10.1063/1.118120

M3 - 文章

AN - SCOPUS:0002981453

SN - 0003-6951

VL - 69

SP - 64

EP - 66

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

The effect of carbon on strain relaxation and phase formation in the Ti/Si_1-x-yGe_xC_y/Si contact system

Abstract

Access to Document

Other files and links

Fingerprint

Cite this