Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

F. Palumbo; S. Pazos; F. Aguirre; R. Winter; I. Krylov; M. Eizenberg

doi:10.1016/j.sse.2017.03.009

Temperature dependence of trapping effects in metal gates/Al₂O₃/InGaAs stacks

F. Palumbo^*, S. Pazos, F. Aguirre, R. Winter, I. Krylov, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The influence of the temperature on Metal Gate/Al₂O₃/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al₂O₃/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al₂O₃ interface. On the other side, the Al₂O₃/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al₂O₃ in terms of the spatial defect distribution.

Original language	English
Pages (from-to)	12-18
Number of pages	7
Journal	Solid-State Electronics
Volume	132
DOIs	https://doi.org/10.1016/j.sse.2017.03.009
State	Published - 1 Jun 2017
Externally published	Yes

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title = "Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks",

abstract = "The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution.",

author = "F. Palumbo and S. Pazos and F. Aguirre and R. Winter and I. Krylov and M. Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

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doi = "10.1016/j.sse.2017.03.009",

language = "英语",

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T1 - Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks

AU - Palumbo, F.

AU - Pazos, S.

AU - Aguirre, F.

AU - Winter, R.

AU - Krylov, I.

AU - Eizenberg, M.

PY - 2017/6/1

Y1 - 2017/6/1

N2 - The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution.

AB - The influence of the temperature on Metal Gate/Al2O3/n-InGaAs stacks has been studied by means of capacitance-voltage (C-V) hysteresis and flat band voltage as function of both negative and positive stress fields. It was found that the de-trapping effect decreases at low-temperature, indicating that the de-trapping of trapped electrons from oxide traps may be performed via Al2O3/InGaAs interface defects. The dependence of the C-V hysteresis on the stress field at different temperatures in our InGaAs stacks can be explained in terms of the defect spatial distribution. An oxide defect distribution can be found very close to the metal gate/Al2O3 interface. On the other side, the Al2O3/InGaAs interface presents defects distributed from the interface into the bulk of the oxide, showing the influence of InGaAs on Al2O3 in terms of the spatial defect distribution.

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DO - 10.1016/j.sse.2017.03.009

M3 - 文章

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SN - 0038-1101

VL - 132

SP - 12

EP - 18

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Temperature dependence of trapping effects in metal gates/Al₂O₃/InGaAs stacks

Abstract

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