TY - JOUR
T1 - Surface evolution of sputtered Cu(In,Ga)Se2 thin films under various annealing temperatures
AU - Han, Jun feng
AU - Ouyang, Liang qi
AU - Zhuang, Da ming
AU - Zhao, Ming
AU - Liao, Cheng
AU - Liu, Jiang
AU - Cha, Limei
AU - Besland, M. P.
N1 - Publisher Copyright:
© 2015, Springer Science+Business Media New York.
PY - 2015/7/24
Y1 - 2015/7/24
N2 - In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing under Se atmosphere in the 240–550 °C range. X-ray diffraction (XRD), Grazing incidence x-ray diffraction (GIXRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were performed to investigate the crystalline structures and chemical compositions of the CIGS thin films. According to XRD, GIXRD and Raman analyses, the CIGS phase was splitted into CuSe phase and In4Se3 phase at the very surface when CIGS was annealed at 240 and 270 °C. In addition, XRD patterns indicated a grain size growth with increasing temperature. XPS analyses contributed more information on the film surface chemistry. Indeed, O 1 s and Na 1 s signals were observed at the film surface above 380 °C, and were even increased from 450 to 550 °C. Simultaneously, the surface appeared to exhibit a Cu and Ga poor surface chemical composition. The strong correlation between O, Na and Cu atomic contents in the CIGS surface were discussed in the paper.
AB - In this work, copper indium gallium selenide (CIGS) thin films were prepared by sputtering CIGS quaternary target and subsequent annealing under Se atmosphere in the 240–550 °C range. X-ray diffraction (XRD), Grazing incidence x-ray diffraction (GIXRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were performed to investigate the crystalline structures and chemical compositions of the CIGS thin films. According to XRD, GIXRD and Raman analyses, the CIGS phase was splitted into CuSe phase and In4Se3 phase at the very surface when CIGS was annealed at 240 and 270 °C. In addition, XRD patterns indicated a grain size growth with increasing temperature. XPS analyses contributed more information on the film surface chemistry. Indeed, O 1 s and Na 1 s signals were observed at the film surface above 380 °C, and were even increased from 450 to 550 °C. Simultaneously, the surface appeared to exhibit a Cu and Ga poor surface chemical composition. The strong correlation between O, Na and Cu atomic contents in the CIGS surface were discussed in the paper.
UR - http://www.scopus.com/inward/record.url?scp=84931567486&partnerID=8YFLogxK
U2 - 10.1007/s10854-015-2991-6
DO - 10.1007/s10854-015-2991-6
M3 - 文章
AN - SCOPUS:84931567486
SN - 0957-4522
VL - 26
SP - 4840
EP - 4847
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 7
ER -