Suppression of chemical and electrical instabilities in mesoporous silica films by molecular capping

TY - JOUR

T1 - Suppression of chemical and electrical instabilities in mesoporous silica films by molecular capping

AU - Singh, A. P.

AU - Gandhi, D. D.

AU - Lipp, E.

AU - Eizenberg, M.

AU - Ramanath, G.

N1 - Funding Information: We gratefully acknowledge funding from the National Science Foundation through DMR 0519081 and ECS 0501488 grants, U.S.-Israel Binational Science Foundation, and a gift grant from IBM.

PY - 2006

Y1 - 2006

N2 - Mesoporous silica (MPS) thin films are attractive for achieving low relative dielectric permittivity (low k) interlayer isolation in integrated circuit wiring, but are susceptible to instabilities in electrical behavior due to water uptake and copper diffusion. Here, we show that capping MPS films with a trimethyl-group terminated organosilane layer irreversibly suppresses moisture-induced capacitance instabilities, and decreases the relative dielectric permittivity and Cu-induced leakage currents. Analysis of capacitance-voltage and current-voltage characteristics along with infrared spectroscopy shows that the trimethyl organosilanes inhibit hydrogen bonding of water molecules by rendering the dielectric surfaces hydrophobic. These features are promising for tailoring the chemical and interfacial properties and reliability of porous dielectric materials for insulation in device wiring applications.

AB - Mesoporous silica (MPS) thin films are attractive for achieving low relative dielectric permittivity (low k) interlayer isolation in integrated circuit wiring, but are susceptible to instabilities in electrical behavior due to water uptake and copper diffusion. Here, we show that capping MPS films with a trimethyl-group terminated organosilane layer irreversibly suppresses moisture-induced capacitance instabilities, and decreases the relative dielectric permittivity and Cu-induced leakage currents. Analysis of capacitance-voltage and current-voltage characteristics along with infrared spectroscopy shows that the trimethyl organosilanes inhibit hydrogen bonding of water molecules by rendering the dielectric surfaces hydrophobic. These features are promising for tailoring the chemical and interfacial properties and reliability of porous dielectric materials for insulation in device wiring applications.

UR - http://www.scopus.com/inward/record.url?scp=33845777162&partnerID=8YFLogxK

U2 - 10.1063/1.2365715

DO - 10.1063/1.2365715

M3 - 文章

AN - SCOPUS:33845777162

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114504

ER -