Study of porous silica based films as low-k dielectric material and their interface with copper metallization

Engineering & Materials Science

• Low-k dielectric 100%
• Metallizing 78%
• Silica 69%
• Copper 54%
• X ray photoelectron spectroscopy 18%
• Surface active agents 16%
• Plasmas 13%
• Secondary ion mass spectrometry 11%
• Plasma enhanced chemical vapor deposition 10%
• Self assembly 9%
• Physical vapor deposition 9%
• Vaporization 8%
• Topography 8%
• Transmission electron microscopy 7%
• Permittivity 7%
• Annealing 7%
• Integrated circuits 6%
• Vacuum 6%
• Porosity 6%
• Surface roughness 6%
• Time delay 6%
• Hydrogen 5%
• Decomposition 5%
• Chemical analysis 4%
• Temperature 2%

Physics & Astronomy

• silicon dioxide 51%
• copper 48%
• surfactants 14%
• hydrogen plasma 8%
• self assembly 7%
• secondary ion mass spectrometry 7%
• drying 7%
• integrated circuits 7%
• topography 6%
• chemical composition 6%
• time lag 6%
• surface roughness 6%
• penetration 6%
• chips 5%
• atomic force microscopy 5%
• decomposition 5%
• insulators 5%
• porosity 5%
• permittivity 5%
• transmission electron microscopy 4%
• electrical resistivity 4%
• annealing 4%
• temperature 2%

Chemical Compounds

• Dielectric Material 59%
• Porosity 39%
• Liquid Film 32%
• Surfactant 10%
• Plasma 9%
• Amorphous Structure 8%
• Nonconductor 8%
• Vaporization 7%
• Surface Roughness 7%
• Dielectric Constant 6%
• Vacuum 5%
• Annealing 5%
• Decomposition 4%
• Diffusion 4%
• Environment 4%
• Hydrogen 3%
• Reduction 3%
• Time 2%