TY - GEN
T1 - Strong-Field Resonant Dynamics in Semiconductors
T2 - CLEO: Applications and Technology, CLEO AT 2016
AU - Wismer, Michael S.
AU - Kruchinin, Stanislav Yu
AU - Ciappina, Marcelo
AU - Stockman, Mark I.
AU - Yakovlev, Vladislav S.
N1 - Publisher Copyright:
© OSA 2016.
PY - 2016
Y1 - 2016
N2 - We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and electron populations undergo very rapid changes when electrons pass near the Brillouin zone center. By the end of a laser pulse, these dynamics may form very asymmetric reciprocal-space population distributions, inducing thus a residual electric current controlled by the carrier-envelope phase.
AB - We predict that a direct bandgap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations (KARO). In this regime, Rabi oscillations are strongly coupled to intraband motion, and electron populations undergo very rapid changes when electrons pass near the Brillouin zone center. By the end of a laser pulse, these dynamics may form very asymmetric reciprocal-space population distributions, inducing thus a residual electric current controlled by the carrier-envelope phase.
UR - http://www.scopus.com/inward/record.url?scp=85136442335&partnerID=8YFLogxK
M3 - 会议稿件
AN - SCOPUS:85136442335
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - Optica Publishing Group (formerly OSA)
Y2 - 5 June 2016 through 10 June 2016
ER -