Strong-Field Resonant Dynamics in Semiconductors

Michael S. Wismer, Stanislav Yu Kruchinin, Marcelo Ciappina, Mark I. Stockman, Vladislav S. Yakovlev

Research output: Contribution to journalArticlepeer-review

58 Scopus citations


We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.

Original languageEnglish
Article number197401
JournalPhysical Review Letters
Issue number19
StatePublished - 10 May 2016
Externally publishedYes


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