TY - JOUR
T1 - Strong-Field Resonant Dynamics in Semiconductors
AU - Wismer, Michael S.
AU - Kruchinin, Stanislav Yu
AU - Ciappina, Marcelo
AU - Stockman, Mark I.
AU - Yakovlev, Vladislav S.
N1 - Publisher Copyright:
© 2016 American Physical Society.
PY - 2016/5/10
Y1 - 2016/5/10
N2 - We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.
AB - We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.
UR - http://www.scopus.com/inward/record.url?scp=84969135645&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.116.197401
DO - 10.1103/PhysRevLett.116.197401
M3 - 文章
AN - SCOPUS:84969135645
SN - 0031-9007
VL - 116
JO - Physical Review Letters
JF - Physical Review Letters
IS - 19
M1 - 197401
ER -