TY - JOUR
T1 - Strain relaxation and dopant distribution in the rapid thermal annealing of Co with Si/Si1-xGex/Si heterostructure
AU - Miron, Y.
AU - Efrati Fastow, M.
AU - Cytermann, C.
AU - Brener, R.
AU - Eizenberg, M.
AU - Glück, M.
AU - Kibbel, H.
AU - König, U.
N1 - Funding Information:
This research was supported by Daimler–Benz Aktiengesellschaft. Professor F. Meyer, Orsay University, France, is acknowledged for her help in rapid thermal annealing.
PY - 1998/12
Y1 - 1998/12
N2 - The reaction of cobalt with the Si-sacrificial cap in the strained Si/Si1-xGex/Si MBE grown heterostructure was studied. The Si-cap is added to prevent the relaxation of the SiGe and to guarantee uniform and reliable silicidation reaction. The Si1-xGex epilayer, with Ge content between 18 and 28 at%, was highly B doped, while the Si-cap was undoped or B doped either during growth or by ion implantation. Cobalt evaporation was followed by rapid thermal annealing at 450-700°C for 30 sec in N2 or Ar + 10%H2. When the suicide penetrated the Si-cap/Si1-xGex interface, noticeable out-diffusion of Ge and B to the surface was observed. In spite of the presence of the Si-cap significant strain relaxation was observed in three cases: (1) in the implanted samples, although the implantation was confined to the Si-cap, (2) when the Co layer was too thick, such that the suicide penetrated the SiGe layer and (3) when the Ge content in the SiGe layer was relatively high (27.5%).
AB - The reaction of cobalt with the Si-sacrificial cap in the strained Si/Si1-xGex/Si MBE grown heterostructure was studied. The Si-cap is added to prevent the relaxation of the SiGe and to guarantee uniform and reliable silicidation reaction. The Si1-xGex epilayer, with Ge content between 18 and 28 at%, was highly B doped, while the Si-cap was undoped or B doped either during growth or by ion implantation. Cobalt evaporation was followed by rapid thermal annealing at 450-700°C for 30 sec in N2 or Ar + 10%H2. When the suicide penetrated the Si-cap/Si1-xGex interface, noticeable out-diffusion of Ge and B to the surface was observed. In spite of the presence of the Si-cap significant strain relaxation was observed in three cases: (1) in the implanted samples, although the implantation was confined to the Si-cap, (2) when the Co layer was too thick, such that the suicide penetrated the SiGe layer and (3) when the Ge content in the SiGe layer was relatively high (27.5%).
UR - http://www.scopus.com/inward/record.url?scp=0043134568&partnerID=8YFLogxK
U2 - 10.1016/S1369-8001(98)00032-8
DO - 10.1016/S1369-8001(98)00032-8
M3 - 文章
AN - SCOPUS:0043134568
SN - 1369-8001
VL - 1
SP - 257
EP - 261
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 3-4
ER -
