Si3N4 as a useful dielectric for InGaAs MIS stacks

I. Krylov; A. Gavrilov; S. Cohen; D. Ritter; M. Eizenberg

doi:10.1149/1.3633042

Si₃N₄ as a useful dielectric for InGaAs MIS stacks

I. Krylov^*, A. Gavrilov, S. Cohen, D. Ritter, M. Eizenberg

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Si₃N₄ works as a good dielectric on InGaAs by the process optimization. 30 min anneal at 400°C results in D_it ∼ 10¹² eV^-1cm^-2. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300°C - 500°C. It was found that 400°C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flatband hysteresis were observed for forming gas treatment compared to N₂/vacuum anneals.

Original language	English
Title of host publication	Physics and Technology of High-k Materials 9
Publisher	Electrochemical Society Inc.
Pages	255-263
Number of pages	9
Edition	3
ISBN (Electronic)	9781607682578
ISBN (Print)	9781566779036
DOIs	https://doi.org/10.1149/1.3633042
State	Published - 2011
Externally published	Yes
Event	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States Duration: 10 Oct 2011 → 12 Oct 2011

Publication series

Name	ECS Transactions
Number	3
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	10/10/11 → 12/10/11

Access to Document

10.1149/1.3633042

Cite this

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title = "Si3N4 as a useful dielectric for InGaAs MIS stacks",

abstract = "Si3N4 works as a good dielectric on InGaAs by the process optimization. 30 min anneal at 400°C results in Dit ∼ 1012 eV-1cm-2. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300°C - 500°C. It was found that 400°C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flatband hysteresis were observed for forming gas treatment compared to N2/vacuum anneals.",

author = "I. Krylov and A. Gavrilov and S. Cohen and D. Ritter and M. Eizenberg",

year = "2011",

doi = "10.1149/1.3633042",

language = "英语",

isbn = "9781566779036",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "255--263",

booktitle = "Physics and Technology of High-k Materials 9",

edition = "3",

note = "9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting ; Conference date: 10-10-2011 Through 12-10-2011",

}

Krylov, I, Gavrilov, A, Cohen, S, Ritter, D & Eizenberg, M 2011, Si₃N₄ as a useful dielectric for InGaAs MIS stacks. in Physics and Technology of High-k Materials 9. 3 edn, ECS Transactions, no. 3, vol. 41, Electrochemical Society Inc., pp. 255-263, 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting, Boston, MA, United States, 10/10/11. https://doi.org/10.1149/1.3633042

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T1 - Si3N4 as a useful dielectric for InGaAs MIS stacks

AU - Krylov, I.

AU - Gavrilov, A.

AU - Cohen, S.

AU - Ritter, D.

AU - Eizenberg, M.

PY - 2011

Y1 - 2011

N2 - Si3N4 works as a good dielectric on InGaAs by the process optimization. 30 min anneal at 400°C results in Dit ∼ 1012 eV-1cm-2. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300°C - 500°C. It was found that 400°C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flatband hysteresis were observed for forming gas treatment compared to N2/vacuum anneals.

AB - Si3N4 works as a good dielectric on InGaAs by the process optimization. 30 min anneal at 400°C results in Dit ∼ 1012 eV-1cm-2. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300°C - 500°C. It was found that 400°C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flatband hysteresis were observed for forming gas treatment compared to N2/vacuum anneals.

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DO - 10.1149/1.3633042

M3 - 会议稿件

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SN - 9781566779036

T3 - ECS Transactions

SP - 255

EP - 263

BT - Physics and Technology of High-k Materials 9

PB - Electrochemical Society Inc.

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