Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis

H. R. Wu; M. L. Wang; Q. L. Song; Y. Wu; Z. T. Xie; X. D. Gao; X. M. Ding; X. Y. Hou

doi:10.1016/j.cap.2006.07.002

Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis

H. R. Wu, M. L. Wang, Q. L. Song, Y. Wu, Z. T. Xie, X. D. Gao, X. M. Ding, X. Y. Hou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In the present work, current-voltage (I-V) characteristics of fullerene devices (ITO{minus 45 degree rule}C₆₀{minus 45 degree rule}Al) are reexamined by in situ electrical measurement in high vacuum and by infrared imaging analysis. Two kinds of I-V curves are detected: 'ohmic' and nonohmic. Degradation processes of the two different devices are measured, and 'ohmic' degradation processes are ascribed to short-circuiting. ITO{minus 45 degree rule}C₆₀{minus 45 degree rule}Al devices in high vacuum are confirmed to be intrinsically nonohmic. Surface temperature distribution of the two different devices is measured and localized heat is detected further confirming the existence of short-circuiting in 'ohmic' devices. To avoid short-circuit, organic buffers are inserted between fullerene layer and cathode and this is found to be effective.

Original language	English
Pages (from-to)	231-235
Number of pages	5
Journal	Current Applied Physics
Volume	7
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2006.07.002
State	Published - Mar 2007
Externally published	Yes

Keywords

Fullerene
In situ high vacuum measurement
Infrascope image
Short-circuiting

Access to Document

10.1016/j.cap.2006.07.002

Cite this

@article{285b9c80ff394d9d9ff6ff13fcbd9cfd,

title = "Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis",

abstract = "In the present work, current-voltage (I-V) characteristics of fullerene devices (ITO{minus 45 degree rule}C60{minus 45 degree rule}Al) are reexamined by in situ electrical measurement in high vacuum and by infrared imaging analysis. Two kinds of I-V curves are detected: 'ohmic' and nonohmic. Degradation processes of the two different devices are measured, and 'ohmic' degradation processes are ascribed to short-circuiting. ITO{minus 45 degree rule}C60{minus 45 degree rule}Al devices in high vacuum are confirmed to be intrinsically nonohmic. Surface temperature distribution of the two different devices is measured and localized heat is detected further confirming the existence of short-circuiting in 'ohmic' devices. To avoid short-circuit, organic buffers are inserted between fullerene layer and cathode and this is found to be effective.",

keywords = "Fullerene, In situ high vacuum measurement, Infrascope image, Short-circuiting",

author = "Wu, {H. R.} and Wang, {M. L.} and Song, {Q. L.} and Y. Wu and Xie, {Z. T.} and Gao, {X. D.} and Ding, {X. M.} and Hou, {X. Y.}",

note = "Funding Information: This work is supported by CNKBRSF, and the National Natural Science Foundation of China. ",

year = "2007",

month = mar,

doi = "10.1016/j.cap.2006.07.002",

language = "英语",

volume = "7",

pages = "231--235",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis

AU - Wu, H. R.

AU - Wang, M. L.

AU - Song, Q. L.

AU - Wu, Y.

AU - Xie, Z. T.

AU - Gao, X. D.

AU - Ding, X. M.

AU - Hou, X. Y.

N1 - Funding Information: This work is supported by CNKBRSF, and the National Natural Science Foundation of China.

PY - 2007/3

Y1 - 2007/3

N2 - In the present work, current-voltage (I-V) characteristics of fullerene devices (ITO{minus 45 degree rule}C60{minus 45 degree rule}Al) are reexamined by in situ electrical measurement in high vacuum and by infrared imaging analysis. Two kinds of I-V curves are detected: 'ohmic' and nonohmic. Degradation processes of the two different devices are measured, and 'ohmic' degradation processes are ascribed to short-circuiting. ITO{minus 45 degree rule}C60{minus 45 degree rule}Al devices in high vacuum are confirmed to be intrinsically nonohmic. Surface temperature distribution of the two different devices is measured and localized heat is detected further confirming the existence of short-circuiting in 'ohmic' devices. To avoid short-circuit, organic buffers are inserted between fullerene layer and cathode and this is found to be effective.

AB - In the present work, current-voltage (I-V) characteristics of fullerene devices (ITO{minus 45 degree rule}C60{minus 45 degree rule}Al) are reexamined by in situ electrical measurement in high vacuum and by infrared imaging analysis. Two kinds of I-V curves are detected: 'ohmic' and nonohmic. Degradation processes of the two different devices are measured, and 'ohmic' degradation processes are ascribed to short-circuiting. ITO{minus 45 degree rule}C60{minus 45 degree rule}Al devices in high vacuum are confirmed to be intrinsically nonohmic. Surface temperature distribution of the two different devices is measured and localized heat is detected further confirming the existence of short-circuiting in 'ohmic' devices. To avoid short-circuit, organic buffers are inserted between fullerene layer and cathode and this is found to be effective.

KW - Fullerene

KW - In situ high vacuum measurement

KW - Infrascope image

KW - Short-circuiting

UR - http://www.scopus.com/inward/record.url?scp=33845901575&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2006.07.002

DO - 10.1016/j.cap.2006.07.002

M3 - 文章

AN - SCOPUS:33845901575

SN - 1567-1739

VL - 7

SP - 231

EP - 235

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

Short-circuiting in fullerene devices studied by in situ electrical measurement in high vacuum and infrared imaging analysis

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this