Abstract
We have succeeded in making shallow silicide contacts on Si by using codeposited Pt2Si and Pt1.2Si alloyed films. Cross-sectional transmission electron microscopy showed that a uniform contact 10 nm deep was achieved by both films. Current-voltage measurements showed that the Schottky barrier height of these shallow contacts was as good as that of PtSi made by reacting pure Pt with n-Si.
Original language | English |
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Pages (from-to) | 547-549 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 37 |
Issue number | 6 |
DOIs | |
State | Published - 1980 |
Externally published | Yes |