Room-Temperature Synthesized Amorphous P-Type Transparent Ga2O3-Cu2S Alloy Thin Films with Tunable Optoelectronic Properties

Xiao Hu Lv, Zhan Hua Li, Yuan Shen Qi, Tooru Tanaka, Qi Xin Guo, Kin Man Yu, Chao Ping Liu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Ultra-wide bandgap Ga2O3 has many intriguing properties which make them potentially suitable for optoelectronic applications. However, its functionalities are largely hindered by the lack of p-type Ga2O3 based materials. In this work, we synthesized amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films with x 0.2 to ∼5.5 eV below the vacuum level, making the formation of native shallow acceptors more energetically favorable and hence enhancing their p-type conductivity. Our results show that electrical and optical properties of these amorphous p-type transparent (Ga2O3)1−x(Cu2S)x alloy thin films are potentially important in bipolar devices applications, e.g., Ga2O3 based p-n heterojunction power devices and high efficiency solar cells.
Original languageEnglish
JournalApplied Surface Science
Volume615
DOIs
StatePublished - 1 Apr 2023

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