Resistive switching effect on Al2O3/InGaAs stacks

F. Palumbo; P. Shekhter; I. Krylov; D. Ritter; M. Eizenberg

doi:10.1016/j.mee.2013.03.079

Resistive switching effect on Al₂O₃/InGaAs stacks

F. Palumbo^*, P. Shekhter, I. Krylov, D. Ritter, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al ₂O₃/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.

Original language	English
Pages (from-to)	83-86
Number of pages	4
Journal	Microelectronic Engineering
Volume	109
DOIs	https://doi.org/10.1016/j.mee.2013.03.079
State	Published - 2013
Externally published	Yes

Keywords

High-k dielectrics
Oxide breakdown
Resistive switching

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10.1016/j.mee.2013.03.079

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title = "Resistive switching effect on Al2O3/InGaAs stacks",

abstract = "The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al 2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.",

keywords = "High-k dielectrics, Oxide breakdown, Resistive switching",

author = "F. Palumbo and P. Shekhter and I. Krylov and D. Ritter and M. Eizenberg",

note = "Funding Information: The authors gratefully acknowledge Prof. T.P. Ma and his group (Yale University) for providing samples A and B. One of the authors, Felix Palumbo, is a researcher of CONICET on leave at the Technion, and acknowledges the support of the Marie Curie IIF within the 7th EU Program.",

year = "2013",

doi = "10.1016/j.mee.2013.03.079",

language = "英语",

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AU - Palumbo, F.

AU - Shekhter, P.

AU - Krylov, I.

AU - Ritter, D.

AU - Eizenberg, M.

N1 - Funding Information: The authors gratefully acknowledge Prof. T.P. Ma and his group (Yale University) for providing samples A and B. One of the authors, Felix Palumbo, is a researcher of CONICET on leave at the Technion, and acknowledges the support of the Marie Curie IIF within the 7th EU Program.

PY - 2013

Y1 - 2013

N2 - The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al 2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.

AB - The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al 2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.

KW - High-k dielectrics

KW - Oxide breakdown

KW - Resistive switching

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DO - 10.1016/j.mee.2013.03.079

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VL - 109

SP - 83

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JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Resistive switching effect on Al₂O₃/InGaAs stacks

Abstract

Keywords

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