Resistive switching effect on Al2O3/InGaAs stacks

F. Palumbo*, P. Shekhter, I. Krylov, D. Ritter, M. Eizenberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The resistive switching (RS) phenomenon is currently attracting a lot of attention due to its potential applicability for nonvolatile memory devices. Among all the systems currently under consideration, the analysis of MG/Al 2O3/InGaAs is very relevant since this stack is a strong candidate for the new generation of CMOS devices with high mobility channels.

Original languageEnglish
Pages (from-to)83-86
Number of pages4
JournalMicroelectronic Engineering
Volume109
DOIs
StatePublished - 2013
Externally publishedYes

Keywords

  • High-k dielectrics
  • Oxide breakdown
  • Resistive switching

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