Thin films of amorphous Si1-xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and β-Sn which formed at the a-Si1-xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1-xGex:H films was found: at low temperatures (T<475°C) the Si-rich layers were more reactive, whereas at T>475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1-xGex:H/SnO2 contacts.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1994|
|Event||Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA|
Duration: 4 Apr 1994 → 8 Apr 1994