Reduction of SnO2 by a-Si1-xGex

F. Edelman*, R. Brener, C. Cytermann, M. Eizenberg, R. Weil, W. Beyer

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Thin films of amorphous Si1-xGex:H with x=0, 0.3, 0.6, and 1 were deposited by RF glow discharge at 200-250°C on SnO2/glass substrates. The tin dioxide was reduced by heat treatment at the temperature range of 400-600°C resulting in a layered structure of silicon oxide, tin suboxide and β-Sn which formed at the a-Si1-xGex:H/SnO2 interface. A strong dependence of the extent of the reduction on the Ge content in the a-Si1-xGex:H films was found: at low temperatures (T<475°C) the Si-rich layers were more reactive, whereas at T>475°C the Ge-rich films totally reduced the SnO2. The interfacial reduction process was followed by a drop in the transparency and drastic changes in the sheet resistance of the a-Si1-xGex:H/SnO2 contacts.

Original languageEnglish
Pages (from-to)589-594
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: 4 Apr 19948 Apr 1994


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