Rashba plasmon polaritons in semiconductor heterostructures

I. V. Iorsh; V. M. Kovalev; M. A. Kaliteevski; I. G. Savenko

doi:10.1063/1.4794847

Rashba plasmon polaritons in semiconductor heterostructures

I. V. Iorsh^*, V. M. Kovalev, M. A. Kaliteevski, I. G. Savenko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.

Original language	English
Article number	101105
Journal	Applied Physics Letters
Volume	102
Issue number	10
DOIs	https://doi.org/10.1063/1.4794847
State	Published - 11 Mar 2013
Externally published	Yes

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title = "Rashba plasmon polaritons in semiconductor heterostructures",

abstract = "We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.",

author = "Iorsh, {I. V.} and Kovalev, {V. M.} and Kaliteevski, {M. A.} and Savenko, {I. G.}",

note = "Funding Information: The authors thank I. A. Shelykh, M. M. Glazov, and O. V. Kibis for useful discussions. This work was supported by Rannis “Center of excellence in polaritonics,” FP7 IRSES projects “SPINMET,” “POLAPHEN,” and “POLALAS,” Russian Fund of Basic Research and COST “POLATOM” program. I.G.S. acknowledges support of the Eimskip Fund.",

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doi = "10.1063/1.4794847",

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AU - Kaliteevski, M. A.

AU - Savenko, I. G.

N1 - Funding Information: The authors thank I. A. Shelykh, M. M. Glazov, and O. V. Kibis for useful discussions. This work was supported by Rannis “Center of excellence in polaritonics,” FP7 IRSES projects “SPINMET,” “POLAPHEN,” and “POLALAS,” Russian Fund of Basic Research and COST “POLATOM” program. I.G.S. acknowledges support of the Eimskip Fund.

PY - 2013/3/11

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N2 - We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.

AB - We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.

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DO - 10.1063/1.4794847

M3 - 文章

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VL - 102

JO - Applied Physics Letters

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ER -

Rashba plasmon polaritons in semiconductor heterostructures

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