Rashba plasmon polaritons in semiconductor heterostructures

I. V. Iorsh*, V. M. Kovalev, M. A. Kaliteevski, I. G. Savenko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.

Original languageEnglish
Article number101105
JournalApplied Physics Letters
Issue number10
StatePublished - 11 Mar 2013
Externally publishedYes


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