TY - JOUR
T1 - Rapid thermal annealing of Zr/SiGeC contacts
AU - Barthula, M.
AU - Aubry-Fortuna, V.
AU - Meyer, F.
AU - Chaix-Pluchery, O.
AU - Eyal, A.
AU - Eizenberg, M.
AU - Warren, P.
PY - 1998/12
Y1 - 1998/12
N2 - In this work, the effect of rapid thermal annealing (400-800°C, 5 min) on the electrical properties of Zr/ Si1-x-yGexCy contacts was investigated. Previously, we have shown that the reaction of Zr with SiGeC leads to the final compound C49-Zr(Si1-zGez)2, with z = x for all compositions examined and that no Ge-segregation is detected. After the reaction, only a small strain relaxation is observed in the unreacted SiGe epilayer, while the strain is totally preserved in the SiGeC one. Schottky barrier heights have been studied as a function of the annealing temperature. RTA leads to a decrease of the barrier for both n- and p-type. The decrease of the barrier height with reverse voltage is always well described by the thermionic emission. Nevertheless, the slight increase of the standard deviation, deducted from barrier height histograms, may show that few interface defects are created during annealing.
AB - In this work, the effect of rapid thermal annealing (400-800°C, 5 min) on the electrical properties of Zr/ Si1-x-yGexCy contacts was investigated. Previously, we have shown that the reaction of Zr with SiGeC leads to the final compound C49-Zr(Si1-zGez)2, with z = x for all compositions examined and that no Ge-segregation is detected. After the reaction, only a small strain relaxation is observed in the unreacted SiGe epilayer, while the strain is totally preserved in the SiGeC one. Schottky barrier heights have been studied as a function of the annealing temperature. RTA leads to a decrease of the barrier for both n- and p-type. The decrease of the barrier height with reverse voltage is always well described by the thermionic emission. Nevertheless, the slight increase of the standard deviation, deducted from barrier height histograms, may show that few interface defects are created during annealing.
UR - http://www.scopus.com/inward/record.url?scp=0346938972&partnerID=8YFLogxK
U2 - 10.1016/S1369-8001(98)00033-X
DO - 10.1016/S1369-8001(98)00033-X
M3 - 文章
AN - SCOPUS:0346938972
SN - 1369-8001
VL - 1
SP - 263
EP - 266
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
IS - 3-4
ER -