In this work, the effect of rapid thermal annealing (400-800°C, 5 min) on the electrical properties of Zr/ Si1-x-yGexCy contacts was investigated. Previously, we have shown that the reaction of Zr with SiGeC leads to the final compound C49-Zr(Si1-zGez)2, with z = x for all compositions examined and that no Ge-segregation is detected. After the reaction, only a small strain relaxation is observed in the unreacted SiGe epilayer, while the strain is totally preserved in the SiGeC one. Schottky barrier heights have been studied as a function of the annealing temperature. RTA leads to a decrease of the barrier for both n- and p-type. The decrease of the barrier height with reverse voltage is always well described by the thermionic emission. Nevertheless, the slight increase of the standard deviation, deducted from barrier height histograms, may show that few interface defects are created during annealing.