Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon

T. Brat; M. Eizenberg; R. Fastow; C. J. Palmstrom; J. W. Mayer

doi:10.1063/1.334798

Pulsed proton-beam annealing of Ir and Ir_xV_100-x thin films on silicon

T. Brat^*, M. Eizenberg, R. Fastow, C. J. Palmstrom, J. W. Mayer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A pulsed proton beam was used to anneal Ir and Ir_xV _100-x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm²) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir ₂Si₃ was detected in the reacted region. For the codeposited Ir_xV_100-x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir: V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.

Original language	English
Pages (from-to)	264-269
Number of pages	6
Journal	Journal of Applied Physics
Volume	57
Issue number	2
DOIs	https://doi.org/10.1063/1.334798
State	Published - 1985
Externally published	Yes

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title = "Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon",

abstract = "A pulsed proton beam was used to anneal Ir and IrxV 100-x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir 2Si3 was detected in the reacted region. For the codeposited IrxV100-x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir: V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.",

author = "T. Brat and M. Eizenberg and R. Fastow and Palmstrom, {C. J.} and Mayer, {J. W.}",

year = "1985",

doi = "10.1063/1.334798",

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pages = "264--269",

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publisher = "American Institute of Physics",

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T1 - Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon

AU - Brat, T.

AU - Eizenberg, M.

AU - Fastow, R.

AU - Palmstrom, C. J.

AU - Mayer, J. W.

PY - 1985

Y1 - 1985

N2 - A pulsed proton beam was used to anneal Ir and IrxV 100-x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir 2Si3 was detected in the reacted region. For the codeposited IrxV100-x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir: V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.

AB - A pulsed proton beam was used to anneal Ir and IrxV 100-x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir 2Si3 was detected in the reacted region. For the codeposited IrxV100-x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir: V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.

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U2 - 10.1063/1.334798

DO - 10.1063/1.334798

M3 - 文章

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SN - 0021-8979

VL - 57

SP - 264

EP - 269

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Pulsed proton-beam annealing of Ir and Ir_xV_100-x thin films on silicon

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