Pulsed proton-beam annealing of Ir and IrxV100-x thin films on silicon

T. Brat*, M. Eizenberg, R. Fastow, C. J. Palmstrom, J. W. Mayer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A pulsed proton beam was used to anneal Ir and IrxV 100-x thin films deposited on Si single crystals. Compound phases were produced by local melting of the metal-Si interface. Phase identification was carried out by x-ray diffraction; while component distribution was determined by Auger electron spectroscopy and Rutherford backscattering spectrometry. The morphology of the silicide layers was examined using transmission electron microscopy; and Schottky barrier heights were determined by current-voltage measurements. At intermediate deposited energy densities (∼0.5 J/cm2) a controlled interfacial reaction was observed. In the case of Ir/Si, amorphous IrSi as well as polycrystalline IrSi and Ir 2Si3 was detected in the reacted region. For the codeposited IrxV100-x film, with x=80 and 50, the interfacial layer reacting with the Si substrate maintained the Ir: V ratio of the as-deposited film. This is in contrast to the case of furnace annealing where preferred accumulation of Ir is observed.

Original languageEnglish
Pages (from-to)264-269
Number of pages6
JournalJournal of Applied Physics
Volume57
Issue number2
DOIs
StatePublished - 1985
Externally publishedYes

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