Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures

Lior Kornblum; Yair Paska; Jonathan A. Rothschild; Hossam Haick; Moshe Eizenberg

doi:10.1063/1.3665630

Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures

Lior Kornblum^*, Yair Paska, Jonathan A. Rothschild, Hossam Haick, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A method is proposed for characterization of the electrostatics of self-assembled monolayers (SAMs). The method is based on the extraction of the metal's effective work function in metal-oxide-semiconductor capacitors, where the SAM is positioned at the metal-oxide interface. Hexyltrichlorosilane molecules assembled on SiO ₂ are used as a model system for this method. A band offset of 0.5 ± 0.15 eV is observed in the SAM sample when compared to a reference with no molecules. Spectroscopy is employed to confirm the presence of silane anchoring groups after metal deposition.

Original language	English
Article number	233508
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3665630
State	Published - 5 Dec 2011
Externally published	Yes

Access to Document

10.1063/1.3665630

Cite this

@article{4d4e6074432d40bfa46b0b65e42d0107,

title = "Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures",

abstract = "A method is proposed for characterization of the electrostatics of self-assembled monolayers (SAMs). The method is based on the extraction of the metal's effective work function in metal-oxide-semiconductor capacitors, where the SAM is positioned at the metal-oxide interface. Hexyltrichlorosilane molecules assembled on SiO 2 are used as a model system for this method. A band offset of 0.5 ± 0.15 eV is observed in the SAM sample when compared to a reference with no molecules. Spectroscopy is employed to confirm the presence of silane anchoring groups after metal deposition.",

author = "Lior Kornblum and Yair Paska and Rothschild, {Jonathan A.} and Hossam Haick and Moshe Eizenberg",

note = "Funding Information: This work was supported by the ALPHA consortium of the Israeli Ministry of Industry, Trade and Labor. The authors thank Dr. R. Brener, A. Shay, O. Haim, and Y. Mozes from the Technion, for XPS measurements, metal deposition, process assistance and technical assistance, respectively. ",

year = "2011",

month = dec,

day = "5",

doi = "10.1063/1.3665630",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures

AU - Kornblum, Lior

AU - Paska, Yair

AU - Rothschild, Jonathan A.

AU - Haick, Hossam

AU - Eizenberg, Moshe

N1 - Funding Information: This work was supported by the ALPHA consortium of the Israeli Ministry of Industry, Trade and Labor. The authors thank Dr. R. Brener, A. Shay, O. Haim, and Y. Mozes from the Technion, for XPS measurements, metal deposition, process assistance and technical assistance, respectively.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - A method is proposed for characterization of the electrostatics of self-assembled monolayers (SAMs). The method is based on the extraction of the metal's effective work function in metal-oxide-semiconductor capacitors, where the SAM is positioned at the metal-oxide interface. Hexyltrichlorosilane molecules assembled on SiO 2 are used as a model system for this method. A band offset of 0.5 ± 0.15 eV is observed in the SAM sample when compared to a reference with no molecules. Spectroscopy is employed to confirm the presence of silane anchoring groups after metal deposition.

AB - A method is proposed for characterization of the electrostatics of self-assembled monolayers (SAMs). The method is based on the extraction of the metal's effective work function in metal-oxide-semiconductor capacitors, where the SAM is positioned at the metal-oxide interface. Hexyltrichlorosilane molecules assembled on SiO 2 are used as a model system for this method. A band offset of 0.5 ± 0.15 eV is observed in the SAM sample when compared to a reference with no molecules. Spectroscopy is employed to confirm the presence of silane anchoring groups after metal deposition.

UR - http://www.scopus.com/inward/record.url?scp=83455163971&partnerID=8YFLogxK

U2 - 10.1063/1.3665630

DO - 10.1063/1.3665630

M3 - 文章

AN - SCOPUS:83455163971

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233508

ER -

Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this