Phase separation and layer sequence reversal during silicide formation with Ni-Cr alloys and Ni-Cr bilayers

TY - JOUR

T1 - Phase separation and layer sequence reversal during silicide formation with Ni-Cr alloys and Ni-Cr bilayers

AU - Appelbaum, A.

AU - Eizenberg, M.

AU - Brener, R.

PY - 1984

Y1 - 1984

N2 - Solid-state reactions of thin films of Ni-Cr alloys, and Ni-Cr bilayers, with Si have been studied by Auger electron spectroscopy and x-ray diffraction. Silicide formation for the alloys which starts at ∼400 °C is completed (after 30 min anneal) for Cr-rich and Ni-rich compositions at 500 and 600 °C, respectively, with phase separation into a NiSi layer near the substrate and a CrSi2 rich layer outside. For the Cr/Ni/Si structure each of the layers reacts independently with Si; structures of Cr/Ni2Si/Si, Cr/NiSi/Si, CrSi2/NiSi/Si, and CrSi2/NiSi2/Si are obtained following 30-min anneals at 300, 400, 500, and 850 °C, respectively. For the Ni/Cr/Si structure for annealing temperatures in the range of 500-750 °C, the inner part of the Cr layer reacts with the substrate to form CrSi2, while the outer part forms a solid solution with Ni; the interaction of this solution with Si results in the inward formation of NiSi and the outward formation of CrSi2. After 850 °C anneal layer sequence reversal is observed, when a NiSi2 layer is formed adjacent to the Si substrate.

AB - Solid-state reactions of thin films of Ni-Cr alloys, and Ni-Cr bilayers, with Si have been studied by Auger electron spectroscopy and x-ray diffraction. Silicide formation for the alloys which starts at ∼400 °C is completed (after 30 min anneal) for Cr-rich and Ni-rich compositions at 500 and 600 °C, respectively, with phase separation into a NiSi layer near the substrate and a CrSi2 rich layer outside. For the Cr/Ni/Si structure each of the layers reacts independently with Si; structures of Cr/Ni2Si/Si, Cr/NiSi/Si, CrSi2/NiSi/Si, and CrSi2/NiSi2/Si are obtained following 30-min anneals at 300, 400, 500, and 850 °C, respectively. For the Ni/Cr/Si structure for annealing temperatures in the range of 500-750 °C, the inner part of the Cr layer reacts with the substrate to form CrSi2, while the outer part forms a solid solution with Ni; the interaction of this solution with Si results in the inward formation of NiSi and the outward formation of CrSi2. After 850 °C anneal layer sequence reversal is observed, when a NiSi2 layer is formed adjacent to the Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=0021375414&partnerID=8YFLogxK

U2 - 10.1063/1.333143

DO - 10.1063/1.333143

M3 - 文章

AN - SCOPUS:0021375414

SN - 0021-8979

VL - 55

SP - 914

EP - 919

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -