Origins for Fermi level control in Metal/High-k/Si stacks with inserted dielectric layers

M. Eizenberg; L. Kornblum

doi:10.1149/05807.0065ecst

Origins for Fermi level control in Metal/High-k/Si stacks with inserted dielectric layers

M. Eizenberg, L. Kornblum

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Ultrathin dielectric capping layers are a prominent route for tuning band offsets and threshold voltages of advanced devices. Recent results obtained for several materials systems are presented and discussed. Ta₂O ₅ is shown to be able to suppress the known dipole at Al ₂O₃-SiO₂ interfaces. In a different system, the diffusion of Al inside an Al₂O₃-capped HfO ₂-based device is studied in detail. The effect of the high temperature diffusion of Al to the HfO₂-SiO₂ interface is demonstrated, and presence of Al at that interface is correlated with the expected band offsets. La₂O₃ deposited in a similar way is known to have an opposite electrostatic effect. We show that La has a fundamentally different diffusion behavior under high temperatures, and that unlike Al it does not stop at the HfO₂-SiO₂ interface, but rather penetrates deep into the SiO₂.

Original language	English
Pages (from-to)	65-70
Number of pages	6
Journal	ECS Transactions
Volume	58
Issue number	7
DOIs	https://doi.org/10.1149/05807.0065ecst
State	Published - 2013
Externally published	Yes

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title = "Origins for Fermi level control in Metal/High-k/Si stacks with inserted dielectric layers",

abstract = "Ultrathin dielectric capping layers are a prominent route for tuning band offsets and threshold voltages of advanced devices. Recent results obtained for several materials systems are presented and discussed. Ta2O 5 is shown to be able to suppress the known dipole at Al 2O3-SiO2 interfaces. In a different system, the diffusion of Al inside an Al2O3-capped HfO 2-based device is studied in detail. The effect of the high temperature diffusion of Al to the HfO2-SiO2 interface is demonstrated, and presence of Al at that interface is correlated with the expected band offsets. La2O3 deposited in a similar way is known to have an opposite electrostatic effect. We show that La has a fundamentally different diffusion behavior under high temperatures, and that unlike Al it does not stop at the HfO2-SiO2 interface, but rather penetrates deep into the SiO2.",

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doi = "10.1149/05807.0065ecst",

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N2 - Ultrathin dielectric capping layers are a prominent route for tuning band offsets and threshold voltages of advanced devices. Recent results obtained for several materials systems are presented and discussed. Ta2O 5 is shown to be able to suppress the known dipole at Al 2O3-SiO2 interfaces. In a different system, the diffusion of Al inside an Al2O3-capped HfO 2-based device is studied in detail. The effect of the high temperature diffusion of Al to the HfO2-SiO2 interface is demonstrated, and presence of Al at that interface is correlated with the expected band offsets. La2O3 deposited in a similar way is known to have an opposite electrostatic effect. We show that La has a fundamentally different diffusion behavior under high temperatures, and that unlike Al it does not stop at the HfO2-SiO2 interface, but rather penetrates deep into the SiO2.

AB - Ultrathin dielectric capping layers are a prominent route for tuning band offsets and threshold voltages of advanced devices. Recent results obtained for several materials systems are presented and discussed. Ta2O 5 is shown to be able to suppress the known dipole at Al 2O3-SiO2 interfaces. In a different system, the diffusion of Al inside an Al2O3-capped HfO 2-based device is studied in detail. The effect of the high temperature diffusion of Al to the HfO2-SiO2 interface is demonstrated, and presence of Al at that interface is correlated with the expected band offsets. La2O3 deposited in a similar way is known to have an opposite electrostatic effect. We show that La has a fundamentally different diffusion behavior under high temperatures, and that unlike Al it does not stop at the HfO2-SiO2 interface, but rather penetrates deep into the SiO2.

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Origins for Fermi level control in Metal/High-k/Si stacks with inserted dielectric layers

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