Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain

K. H.A. Villegas, F. V. Kusmartsev, Y. Luo, I. G. Savenko

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to terahertz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), which is required for numerous biological applications.

Original languageEnglish
Article number087701
JournalPhysical Review Letters
Issue number8
StatePublished - 26 Feb 2020
Externally publishedYes


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