Obtaining low resistivity (∼100 μ Ω cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

TY - JOUR

T1 - Obtaining low resistivity (∼100 μ Ω cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

AU - Krylov, Igor

AU - Zoubenko, Ekaterina

AU - Weinfeld, Kamira

AU - Kauffmann, Yaron

AU - Xu, Xianbin

AU - Ritter, Dan

AU - Eizenberg, Moshe

N1 - Publisher Copyright: © 2018 Author(s).

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Low resistivity (∼100 μΩ cm) titanium nitride (TiN) films were obtained by plasma enhanced atomic layer deposition using tetrakis(dimethylamido)titanium and a nitrogen/argon plasma mixture. The impact of process parameters on film crystallinity, oxygen contamination, and electrical resistivity was studied systematically. A low background pressure during the plasma half-cycle was critical for obtaining low resistivity. The low resistivity films were highly crystalline, having (001) oriented columnar grains. Oxygen and carbon content was about 3% and 2%, respectively. The role of argon plasma in film properties is discussed. Plasma damage to thin dielectric films beneath the TiN layer was minimized by the low-pressure process. The authors suggest that electron scattering at grain boundaries is the dominant mechanism which determines the resistivity of the TiN films, thus obtaining large columnar grains is the key to obtaining low film resistivity.

AB - Low resistivity (∼100 μΩ cm) titanium nitride (TiN) films were obtained by plasma enhanced atomic layer deposition using tetrakis(dimethylamido)titanium and a nitrogen/argon plasma mixture. The impact of process parameters on film crystallinity, oxygen contamination, and electrical resistivity was studied systematically. A low background pressure during the plasma half-cycle was critical for obtaining low resistivity. The low resistivity films were highly crystalline, having (001) oriented columnar grains. Oxygen and carbon content was about 3% and 2%, respectively. The role of argon plasma in film properties is discussed. Plasma damage to thin dielectric films beneath the TiN layer was minimized by the low-pressure process. The authors suggest that electron scattering at grain boundaries is the dominant mechanism which determines the resistivity of the TiN films, thus obtaining large columnar grains is the key to obtaining low film resistivity.

UR - http://www.scopus.com/inward/record.url?scp=85050752847&partnerID=8YFLogxK

U2 - 10.1116/1.5035422

DO - 10.1116/1.5035422

M3 - 文章

AN - SCOPUS:85050752847

SN - 0734-2101

VL - 36

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

M1 - 051505

ER -