Negative capacitance in doped bi-layer organic light-emitting devices

Nuo Li; Xin Dong Gao; Zuo Ti Xie; Zheng Yi Sun; Xun Min Ding; Xiao Yuan Hou

doi:10.1088/1674-1056/20/2/027306

Negative capacitance in doped bi-layer organic light-emitting devices

Nuo Li, Xin Dong Gao, Zuo Ti Xie, Zheng Yi Sun, Xun Min Ding, Xiao Yuan Hou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.

Original language	English
Article number	027306
Journal	Chinese Physics B
Volume	20
Issue number	2
DOIs	https://doi.org/10.1088/1674-1056/20/2/027306
State	Published - Feb 2011
Externally published	Yes

Keywords

doping in different regions
negative capacitance
organic light-emitting device

Access to Document

10.1088/1674-1056/20/2/027306

Cite this

@article{1a32be9d6e764b95a7a48c9f28c0d318,

title = "Negative capacitance in doped bi-layer organic light-emitting devices",

abstract = "This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.",

keywords = "doping in different regions, negative capacitance, organic light-emitting device",

author = "Nuo Li and Gao, {Xin Dong} and Xie, {Zuo Ti} and Sun, {Zheng Yi} and Ding, {Xun Min} and Hou, {Xiao Yuan}",

year = "2011",

month = feb,

doi = "10.1088/1674-1056/20/2/027306",

language = "英语",

volume = "20",

journal = "Chinese Physics B",

issn = "1674-1056",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - Negative capacitance in doped bi-layer organic light-emitting devices

AU - Li, Nuo

AU - Gao, Xin Dong

AU - Xie, Zuo Ti

AU - Sun, Zheng Yi

AU - Ding, Xun Min

AU - Hou, Xiao Yuan

PY - 2011/2

Y1 - 2011/2

N2 - This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.

AB - This paper reports that the doped bi-layer organic light-emitting devices are fabricated by doping in different regions of the light-emitting layer, the admittance and luminance spectra to characterize the capacitance and luminance of the device are measured. Negative capacitance (NC) appeared at low frequencies when the doped devices are biased with high voltages. The measured phase difference between AC voltage applied across the device and AC current flowing through the device show that the device is inductive when NC appears.

KW - doping in different regions

KW - negative capacitance

KW - organic light-emitting device

UR - http://www.scopus.com/inward/record.url?scp=79952382102&partnerID=8YFLogxK

U2 - 10.1088/1674-1056/20/2/027306

DO - 10.1088/1674-1056/20/2/027306

M3 - 文章

AN - SCOPUS:79952382102

SN - 1674-1056

VL - 20

JO - Chinese Physics B

JF - Chinese Physics B

IS - 2

M1 - 027306

ER -

Negative capacitance in doped bi-layer organic light-emitting devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this