Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

Chuanliang Wang, Ahsan Ali, Khadga Jung Karki*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Wide bandgap semiconductors are ideally suited for nonlinear optoelectronics. Because their bandgaps are larger than 2 eV, simultaneous absorption of two or more near-infrared photons is necessary to excite the electrons from the valence to the conduction band. Understanding of the processes that affect multiphoton absorption is important in the design and fabrication of optoelectronic devices. Here, we present an overview of the photocurrent response in photodetectors made from GaP, GaN, InGaN, and SiC when they are excited by photons at 1.2 eV. Recent measurements have shown that sub-bandgap absorptions contribute to photocurrent in GaP, and, thus, it is not a good material for nonlinear optoelectronics. Similarly, the response of GaN is affected by long-lived trapped charges. Photocurrents in InGaN and SiC are predominantly from three- and four-photon absorption, respectively. Moreover, these materials can withstand excitation intensities higher than 1011 W cm−2, making them appropriate platforms for nonlinear optoelectronics.

Original languageEnglish
Article number062101
JournalApplied Physics Letters
Volume124
Issue number6
DOIs
StatePublished - 5 Feb 2024

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