Metallorganic chemical vapor deposited TiN barrier enhancement with SiH4 treatment

Christophe Marcadal; Moshe Eizenberg; Alex Yoon; Ling Chen

doi:10.1149/1.1425792

Metallorganic chemical vapor deposited TiN barrier enhancement with SiH₄ treatment

Christophe Marcadal^*, Moshe Eizenberg, Alex Yoon, Ling Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Copper diffusion barrier performance of titanium nitride films was enhanced by formation of a ternary Ti-Si-N layer. The TiSiN films are prepared by chemical vapor deposition (CVD) using a metallorganic precursor (MOCVD-TiN) by thermal decomposition of tetrakis(dimethylamino)titanium (TDMAT). The deposition is followed by plasma treatment with a gas mixture of nitrogen and hydrogen in order to reduce the resistivity of the films. Finally, the films are in situ exposed to silane. This leads to the formation of a Si-N bond layer in the TiSiN film. The process delivers a film with conformal step coverage and low resistivity with improved barrier performance for advanced Cu metallization. The barrier performance as a function of the N₂H₂ plasma treatment and/or the SiH₄ exposure is explained by the microstructural, compositional, and chemical changes in the films.

Original language	English
Pages (from-to)	C52-C58
Journal	Journal of the Electrochemical Society
Volume	149
Issue number	1
DOIs	https://doi.org/10.1149/1.1425792
State	Published - Jan 2002
Externally published	Yes

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title = "Metallorganic chemical vapor deposited TiN barrier enhancement with SiH4 treatment",

abstract = "Copper diffusion barrier performance of titanium nitride films was enhanced by formation of a ternary Ti-Si-N layer. The TiSiN films are prepared by chemical vapor deposition (CVD) using a metallorganic precursor (MOCVD-TiN) by thermal decomposition of tetrakis(dimethylamino)titanium (TDMAT). The deposition is followed by plasma treatment with a gas mixture of nitrogen and hydrogen in order to reduce the resistivity of the films. Finally, the films are in situ exposed to silane. This leads to the formation of a Si-N bond layer in the TiSiN film. The process delivers a film with conformal step coverage and low resistivity with improved barrier performance for advanced Cu metallization. The barrier performance as a function of the N2H2 plasma treatment and/or the SiH4 exposure is explained by the microstructural, compositional, and chemical changes in the films.",

author = "Christophe Marcadal and Moshe Eizenberg and Alex Yoon and Ling Chen",

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T1 - Metallorganic chemical vapor deposited TiN barrier enhancement with SiH4 treatment

AU - Marcadal, Christophe

AU - Eizenberg, Moshe

AU - Yoon, Alex

AU - Chen, Ling

PY - 2002/1

Y1 - 2002/1

N2 - Copper diffusion barrier performance of titanium nitride films was enhanced by formation of a ternary Ti-Si-N layer. The TiSiN films are prepared by chemical vapor deposition (CVD) using a metallorganic precursor (MOCVD-TiN) by thermal decomposition of tetrakis(dimethylamino)titanium (TDMAT). The deposition is followed by plasma treatment with a gas mixture of nitrogen and hydrogen in order to reduce the resistivity of the films. Finally, the films are in situ exposed to silane. This leads to the formation of a Si-N bond layer in the TiSiN film. The process delivers a film with conformal step coverage and low resistivity with improved barrier performance for advanced Cu metallization. The barrier performance as a function of the N2H2 plasma treatment and/or the SiH4 exposure is explained by the microstructural, compositional, and chemical changes in the films.

AB - Copper diffusion barrier performance of titanium nitride films was enhanced by formation of a ternary Ti-Si-N layer. The TiSiN films are prepared by chemical vapor deposition (CVD) using a metallorganic precursor (MOCVD-TiN) by thermal decomposition of tetrakis(dimethylamino)titanium (TDMAT). The deposition is followed by plasma treatment with a gas mixture of nitrogen and hydrogen in order to reduce the resistivity of the films. Finally, the films are in situ exposed to silane. This leads to the formation of a Si-N bond layer in the TiSiN film. The process delivers a film with conformal step coverage and low resistivity with improved barrier performance for advanced Cu metallization. The barrier performance as a function of the N2H2 plasma treatment and/or the SiH4 exposure is explained by the microstructural, compositional, and chemical changes in the films.

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DO - 10.1149/1.1425792

M3 - 文章

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JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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Metallorganic chemical vapor deposited TiN barrier enhancement with SiH₄ treatment

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