Measurement of the Schottky barrier height between Ni-InGaAs alloy and In 0.53Ga 0.47As

Shlomo Mehari*, Arkady Gavrilov, Shimon Cohen, Pini Shekhter, Moshe Eizenberg, Dan Ritter

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


The temperature dependence of the current-voltage characteristics of Ni-InGaAs alloy Schottky contacts to n-In 0.53Ga 0.47As was measured. Nearly ideal plots with an ideality factor close to unity were obtained. The Arrhenius curve across the wide temperature range of 80-300 K was perfectly linear, yielding a barrier height of 0.239 ± 0.01 eV. This value is substantially larger than previously reported. Conventional metal based Schottky diodes did not exhibit an ideal Schottky behavior. The ideal Schottky diode characteristics are attributed to the lack of oxidation and contamination of the interface between Ni-InGaAs and InGaAs.

Original languageEnglish
Article number072103
JournalApplied Physics Letters
Issue number7
StatePublished - 13 Aug 2012
Externally publishedYes


Dive into the research topics of 'Measurement of the Schottky barrier height between Ni-InGaAs alloy and In <sub>0.53</sub>Ga <sub>0.47</sub>As'. Together they form a unique fingerprint.

Cite this