Manganese Doping of Monolayer MoS 2: The Substrate Is Critical

Kehao Zhang, Simin Feng, Junjie Wang, Angelica Azcatl, Ning Lu, Rafik Addou, Nan Wang, Chanjing Zhou, Jordan Lerach, Vincent Bojan, Moon J. Kim, Long Qing Chen, Robert M. Wallace, Mauricio Terrones, Jun Zhu, Joshua A. Robinson*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

351 Scopus citations


Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS 2 ) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS 2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS 2 , while substrates with reactive surface terminations (i.e., SiO 2 and sapphire) preclude Mn incorporation and merely lead to defective MoS 2 . The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.

Original languageEnglish
Pages (from-to)6586-6591
Number of pages6
JournalNano Letters
Issue number10
StatePublished - 14 Oct 2015
Externally publishedYes


  • Transition metal dichalcogenide
  • in situ doping
  • manganese
  • molybdenum disulfide
  • two-dimensional heterostructure


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