Magnetic manipulation in Dy/Tb multilayer upon electron-irradiation

Amitesh Paul; Pablo D. Esquinazi; Carlos Iván Zandalazini; Annette Setzer; Wolfgang Knolle

doi:10.1016/j.jmmm.2022.170258

Magnetic manipulation in Dy/Tb multilayer upon electron-irradiation

Amitesh Paul^*, Pablo D. Esquinazi, Carlos Iván Zandalazini, Annette Setzer, Wolfgang Knolle

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Manipulation and control of defects triggered by an electron beam allow us to conduct defect engineering on layered materials. We investigate topologically stable helices within a [Dy(10 nm)/Tb(10 nm)]30 multilayer subjected to MeV electron(e)-irradiation up to a maximum fluence of 9.58 × 1018 e/cm2. As electrons can go through the sample homogeneously and with high penetration depth, they produce defects without doping. Our e-irradiation results indicate defect induced magnetic manipulation, which increases the blocking/freezing temperature of spin-frustrated interfaces by 4%. This increase implies an increase in the spin-cluster volume. Consequently, the reduced uncompensated pinning centres decrease the interfacial exchange bias coupling by 45%. Direct manipulation of pinning centres would thereby allow us to tailor spintronic devices in a clean way.

Original language	English
Journal	Journal of Magnetism and Magnetic Materials
DOIs	https://doi.org/10.1016/j.jmmm.2022.170258
State	E-pub ahead of print - 5 Dec 2022

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10.1016/j.jmmm.2022.170258

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title = "Magnetic manipulation in Dy/Tb multilayer upon electron-irradiation",

abstract = "Manipulation and control of defects triggered by an electron beam allow us to conduct defect engineering on layered materials. We investigate topologically stable helices within a [Dy(10 nm)/Tb(10 nm)]30 multilayer subjected to MeV electron(e)-irradiation up to a maximum fluence of 9.58 × 1018 e/cm2. As electrons can go through the sample homogeneously and with high penetration depth, they produce defects without doping. Our e-irradiation results indicate defect induced magnetic manipulation, which increases the blocking/freezing temperature of spin-frustrated interfaces by 4%. This increase implies an increase in the spin-cluster volume. Consequently, the reduced uncompensated pinning centres decrease the interfacial exchange bias coupling by 45%. Direct manipulation of pinning centres would thereby allow us to tailor spintronic devices in a clean way.",

author = "Amitesh Paul and Esquinazi, {Pablo D.} and Zandalazini, {Carlos Iv{\'a}n} and Annette Setzer and Wolfgang Knolle",

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doi = "10.1016/j.jmmm.2022.170258",

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journal = "Journal of Magnetism and Magnetic Materials",

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TY - JOUR

T1 - Magnetic manipulation in Dy/Tb multilayer upon electron-irradiation

AU - Paul, Amitesh

AU - Esquinazi, Pablo D.

AU - Zandalazini, Carlos Iván

AU - Setzer, Annette

AU - Knolle, Wolfgang

PY - 2022/12/5

Y1 - 2022/12/5

N2 - Manipulation and control of defects triggered by an electron beam allow us to conduct defect engineering on layered materials. We investigate topologically stable helices within a [Dy(10 nm)/Tb(10 nm)]30 multilayer subjected to MeV electron(e)-irradiation up to a maximum fluence of 9.58 × 1018 e/cm2. As electrons can go through the sample homogeneously and with high penetration depth, they produce defects without doping. Our e-irradiation results indicate defect induced magnetic manipulation, which increases the blocking/freezing temperature of spin-frustrated interfaces by 4%. This increase implies an increase in the spin-cluster volume. Consequently, the reduced uncompensated pinning centres decrease the interfacial exchange bias coupling by 45%. Direct manipulation of pinning centres would thereby allow us to tailor spintronic devices in a clean way.

AB - Manipulation and control of defects triggered by an electron beam allow us to conduct defect engineering on layered materials. We investigate topologically stable helices within a [Dy(10 nm)/Tb(10 nm)]30 multilayer subjected to MeV electron(e)-irradiation up to a maximum fluence of 9.58 × 1018 e/cm2. As electrons can go through the sample homogeneously and with high penetration depth, they produce defects without doping. Our e-irradiation results indicate defect induced magnetic manipulation, which increases the blocking/freezing temperature of spin-frustrated interfaces by 4%. This increase implies an increase in the spin-cluster volume. Consequently, the reduced uncompensated pinning centres decrease the interfacial exchange bias coupling by 45%. Direct manipulation of pinning centres would thereby allow us to tailor spintronic devices in a clean way.

U2 - 10.1016/j.jmmm.2022.170258

DO - 10.1016/j.jmmm.2022.170258

M3 - 文章

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

ER -

Magnetic manipulation in Dy/Tb multilayer upon electron-irradiation

Abstract

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