Ion beam mixing of ai with gaas

R. Fastow; M. Eizenberg; R. Kalish; V. Richter; R. Brener; M. Peisach

doi:10.1116/1.574318

Ion beam mixing of ai with gaas

R. Fastow, M. Eizenberg, R. Kalish, V. Richter, R. Brener, M. Peisach

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Abstract

Ion beam mixing of thin aluminum films deposited on GaAs substrates was analyzed using Auger electron spectroscopy and transmission electron microscopy. The formation of an AlAs region ncar the interface was observed after room-temperature implantation. High-temperature implantation (at 400°C) resulted in an AI-GaAs layer, which was identified as Al_x Ga_{1 - x} As. The observed reactions resulted from arsenic outdiffusion and subsequent compound formation during implantation.

Original language	English
Pages (from-to)	2842-2844
Number of pages	3
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	5
Issue number	5
DOIs	https://doi.org/10.1116/1.574318
State	Published - Sep 1987
Externally published	Yes

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title = "Ion beam mixing of ai with gaas",

abstract = "Ion beam mixing of thin aluminum films deposited on GaAs substrates was analyzed using Auger electron spectroscopy and transmission electron microscopy. The formation of an AlAs region ncar the interface was observed after room-temperature implantation. High-temperature implantation (at 400°C) resulted in an AI-GaAs layer, which was identified as Alx Ga1 - x As. The observed reactions resulted from arsenic outdiffusion and subsequent compound formation during implantation.",

author = "R. Fastow and M. Eizenberg and R. Kalish and V. Richter and R. Brener and M. Peisach",

year = "1987",

month = sep,

doi = "10.1116/1.574318",

language = "英语",

volume = "5",

pages = "2842--2844",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "5",

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TY - JOUR

T1 - Ion beam mixing of ai with gaas

AU - Fastow, R.

AU - Eizenberg, M.

AU - Kalish, R.

AU - Richter, V.

AU - Brener, R.

AU - Peisach, M.

PY - 1987/9

Y1 - 1987/9

N2 - Ion beam mixing of thin aluminum films deposited on GaAs substrates was analyzed using Auger electron spectroscopy and transmission electron microscopy. The formation of an AlAs region ncar the interface was observed after room-temperature implantation. High-temperature implantation (at 400°C) resulted in an AI-GaAs layer, which was identified as Alx Ga1 - x As. The observed reactions resulted from arsenic outdiffusion and subsequent compound formation during implantation.

AB - Ion beam mixing of thin aluminum films deposited on GaAs substrates was analyzed using Auger electron spectroscopy and transmission electron microscopy. The formation of an AlAs region ncar the interface was observed after room-temperature implantation. High-temperature implantation (at 400°C) resulted in an AI-GaAs layer, which was identified as Alx Ga1 - x As. The observed reactions resulted from arsenic outdiffusion and subsequent compound formation during implantation.

UR - http://www.scopus.com/inward/record.url?scp=6144253874&partnerID=8YFLogxK

U2 - 10.1116/1.574318

DO - 10.1116/1.574318

M3 - 文章

AN - SCOPUS:6144253874

SN - 0734-2101

VL - 5

SP - 2842

EP - 2844

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 5

ER -

Ion beam mixing of ai with gaas

Abstract

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