Ion beam mixing of thin aluminum films deposited on GaAs substrates was analyzed using Auger electron spectroscopy and transmission electron microscopy. The formation of an AlAs region ncar the interface was observed after room-temperature implantation. High-temperature implantation (at 400°C) resulted in an AI-GaAs layer, which was identified as Alx Ga1 - x As. The observed reactions resulted from arsenic outdiffusion and subsequent compound formation during implantation.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|State||Published - Sep 1987|