Wide bandgap semiconductors are widely used in photonic technologies due to their important features, such as large optical windows, fewer energy losses, and fast operational capacity. Next-generation devices require extensive investigation to achieve the desired stability and scalability. Silicon carbide (SiC) is a wide bandgap semiconductor with high optical nonlinearities, large electron transport, and a high breakdown threshold. Integration of SiC in nonlinear photonics requires a systematic analysis of the multiphoton contribution to the device functionality. Here, multiphoton absorption in SiC photodetector is investigated using phase-modulated femtosecond pulses. Quantification of multiphoton absorption is achieved by using a 1030nm phase-modulated pulsed laser. Our measurements show that although the bandgap is less than the energy of three photons combined, four-photon absorption (4PA) contributes to the photocurrent. We interpret 4PA as a phonon-assisted indirect transition from the valance band Γ point to the L point in the conduction band. Moreover, it is found that SiC withstands high excitation intensities, which is suitable for high-power applications.