Interfacial reactions in the a-Si1-xGex: H/Cr/quartz system

F. Edelman; C. Cytermann; R. Brener; M. Eizenberg; R. Weil; W. Beyer

doi:10.1016/0022-3093(93)90484-F

Interfacial reactions in the a-Si_1-xGe_x: H/Cr/quartz system

F. Edelman^*, C. Cytermann, R. Brener, M. Eizenberg, R. Weil, W. Beyer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were used to study the phase formation and kinetics of interfacial reactions in the a-SiSi_1-xGe_x:H/Cr/quartz system after heating to 300-800°C by rapid thermal annealings or vacuum annealings for 10s-12h. We used amorphous Si_1-xGe_x films of various compositions: x = 0, 0.3, 0.8, and 1.0 deposited by glow discharge over Cr-covered fused quartz substrates. No reaction between Cr and SiGe:H in the system was detected up to 400°C. We found that the Ge-rich films were more reactive with the Cr underlayer than the Si-rich films. The main reaction product of the SiGe and Cr interaction was Cr₄Ge₃.

Original language	English
Pages (from-to)	27-30
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	164-166
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(93)90484-F
State	Published - 2 Dec 1993
Externally published	Yes

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@article{858a125718c0462796b84cd17bfd176a,

title = "Interfacial reactions in the a-Si1-xGex: H/Cr/quartz system",

abstract = "X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were used to study the phase formation and kinetics of interfacial reactions in the a-SiSi1-xGex:H/Cr/quartz system after heating to 300-800°C by rapid thermal annealings or vacuum annealings for 10s-12h. We used amorphous Si1-xGex films of various compositions: x = 0, 0.3, 0.8, and 1.0 deposited by glow discharge over Cr-covered fused quartz substrates. No reaction between Cr and SiGe:H in the system was detected up to 400°C. We found that the Ge-rich films were more reactive with the Cr underlayer than the Si-rich films. The main reaction product of the SiGe and Cr interaction was Cr4Ge3.",

author = "F. Edelman and C. Cytermann and R. Brener and M. Eizenberg and R. Weil and W. Beyer",

note = "Funding Information: thick layers with x=0, 0.3, 0.8, and 1.0, were then deposited by CVD glow discharge processing at 200-250°C. We analyzed the a-SiGe:H/Cr/quartz structures using Auger Electron Spectroscopy (AES) and X-ray diffraction (XRD). No interfacial reaction was detected by means of AES in the as-deposited samples. Some oxygen contamination of about 5% was observed by AES near the a-SiGe:H/er interface and inside the as-deposited Cr-layers; the oxygen distribution was not modified by * This research was supported by a grant from the National Council for Research and Developement, Israel and the Forschungszentrum, Jiilich, Germany.",

year = "1993",

month = dec,

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doi = "10.1016/0022-3093(93)90484-F",

language = "英语",

volume = "164-166",

pages = "27--30",

journal = "Journal of Non-Crystalline Solids",

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publisher = "Elsevier",

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T1 - Interfacial reactions in the a-Si1-xGex

T2 - H/Cr/quartz system

AU - Edelman, F.

AU - Cytermann, C.

AU - Brener, R.

AU - Eizenberg, M.

AU - Weil, R.

AU - Beyer, W.

N1 - Funding Information: thick layers with x=0, 0.3, 0.8, and 1.0, were then deposited by CVD glow discharge processing at 200-250°C. We analyzed the a-SiGe:H/Cr/quartz structures using Auger Electron Spectroscopy (AES) and X-ray diffraction (XRD). No interfacial reaction was detected by means of AES in the as-deposited samples. Some oxygen contamination of about 5% was observed by AES near the a-SiGe:H/er interface and inside the as-deposited Cr-layers; the oxygen distribution was not modified by * This research was supported by a grant from the National Council for Research and Developement, Israel and the Forschungszentrum, Jiilich, Germany.

PY - 1993/12/2

Y1 - 1993/12/2

N2 - X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were used to study the phase formation and kinetics of interfacial reactions in the a-SiSi1-xGex:H/Cr/quartz system after heating to 300-800°C by rapid thermal annealings or vacuum annealings for 10s-12h. We used amorphous Si1-xGex films of various compositions: x = 0, 0.3, 0.8, and 1.0 deposited by glow discharge over Cr-covered fused quartz substrates. No reaction between Cr and SiGe:H in the system was detected up to 400°C. We found that the Ge-rich films were more reactive with the Cr underlayer than the Si-rich films. The main reaction product of the SiGe and Cr interaction was Cr4Ge3.

AB - X-ray diffraction, scanning electron microscopy, and Auger electron spectroscopy were used to study the phase formation and kinetics of interfacial reactions in the a-SiSi1-xGex:H/Cr/quartz system after heating to 300-800°C by rapid thermal annealings or vacuum annealings for 10s-12h. We used amorphous Si1-xGex films of various compositions: x = 0, 0.3, 0.8, and 1.0 deposited by glow discharge over Cr-covered fused quartz substrates. No reaction between Cr and SiGe:H in the system was detected up to 400°C. We found that the Ge-rich films were more reactive with the Cr underlayer than the Si-rich films. The main reaction product of the SiGe and Cr interaction was Cr4Ge3.

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Interfacial reactions in the a-Si_1-xGe_x: H/Cr/quartz system

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