Interaction between Ni90Ti10 alloy thin film and Si single crystal

M. Levit; I. Grimberg; B. Z. Weiss; M. Eizenberg

doi:10.1063/1.362669

Interaction between Ni₉₀Ti₁₀ alloy thin film and Si single crystal

M. Levit^*, I. Grimberg, B. Z. Weiss, M. Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Interfacial reactions in annealed Ni₉₀Ti₁₀ alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Well defined phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni suicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound.

Original language	English
Pages (from-to)	1179-1181
Number of pages	3
Journal	Journal of Applied Physics
Volume	79
Issue number	2
DOIs	https://doi.org/10.1063/1.362669
State	Published - 15 Jan 1996
Externally published	Yes

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title = "Interaction between Ni90Ti10 alloy thin film and Si single crystal",

abstract = "Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Well defined phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni suicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound.",

author = "M. Levit and I. Grimberg and Weiss, {B. Z.} and M. Eizenberg",

year = "1996",

month = jan,

day = "15",

doi = "10.1063/1.362669",

language = "英语",

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T1 - Interaction between Ni90Ti10 alloy thin film and Si single crystal

AU - Levit, M.

AU - Grimberg, I.

AU - Weiss, B. Z.

AU - Eizenberg, M.

PY - 1996/1/15

Y1 - 1996/1/15

N2 - Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Well defined phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni suicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound.

AB - Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Well defined phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni suicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound.

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U2 - 10.1063/1.362669

DO - 10.1063/1.362669

M3 - 文章

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SN - 0021-8979

VL - 79

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EP - 1181

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Interaction between Ni₉₀Ti₁₀ alloy thin film and Si single crystal

Abstract

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