Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs

Felix Palumbo; Fernando L. Aguirre; Sebastian M. Pazos; Igor Krylov; Roy Winter; Moshe Eizenberg

doi:10.1016/j.sse.2018.07.006

Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al₂O₃/InGaAs

Felix Palumbo^*, Fernando L. Aguirre, Sebastian M. Pazos, Igor Krylov, Roy Winter, Moshe Eizenberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al₂O₃/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al₂O₃/InGaAs based gate stacks.

Original language	English
Pages (from-to)	71-77
Number of pages	7
Journal	Solid-State Electronics
Volume	149
DOIs	https://doi.org/10.1016/j.sse.2018.07.006
State	Published - Nov 2018
Externally published	Yes

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title = "Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs",

abstract = "In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.",

author = "Felix Palumbo and Aguirre, {Fernando L.} and Pazos, {Sebastian M.} and Igor Krylov and Roy Winter and Moshe Eizenberg",

note = "Publisher Copyright: {\textcopyright} 2018",

year = "2018",

month = nov,

doi = "10.1016/j.sse.2018.07.006",

language = "英语",

volume = "149",

pages = "71--77",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs

AU - Palumbo, Felix

AU - Aguirre, Fernando L.

AU - Pazos, Sebastian M.

AU - Krylov, Igor

AU - Winter, Roy

AU - Eizenberg, Moshe

PY - 2018/11

Y1 - 2018/11

N2 - In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.

AB - In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.

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U2 - 10.1016/j.sse.2018.07.006

DO - 10.1016/j.sse.2018.07.006

M3 - 文章

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SN - 0038-1101

VL - 149

SP - 71

EP - 77

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al₂O₃/InGaAs

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