TY - JOUR
T1 - Influence of diffusion barriers on the nucleation and growth of CVD Cu for interconnect applications
AU - Kröger, R.
AU - Eizenberg, M.
AU - Cong, D.
AU - Yoshida, N.
AU - Chen, L. Y.
AU - Ramaswami, S.
AU - Carl, D.
N1 - Funding Information:
The authors express their thanks to C. Cytermann for performing SIMS measurements and A. Sapir for TEM preparation. R. Kröger acknowledges the support of the Minerva Fellowship Foundation. This work was supported by Applied Materials, Santa Clara, CA.
PY - 2000/1
Y1 - 2000/1
N2 - Nucleation and growth behavior of Cu influence strongly the macroscopic properties of the resultant films. In this work the nucleation of CVD Cu on different underlayer materials is studied. It is found that nucleation on bare diffusion barrier surfaces leads to island growth and, therefore, bad wetting and adhesion. An enrichment of F, O and carbon was found at the interface between the CVD Cu film and the diffusion barrier. However CVD Cu deposited on top of Ta with a 200-angstroms PVD Cu layer on top results in good wetting. CVD Cu films grown on a PVD Cu layer expose a highly preferred 〈111〉 orientation. In this case SIMS analysis reveals a comparably low concentration of oxygen, carbon and flourine at the interface region between the CVD Cu and the barrier. These observations shed light on relevance of surface conditions for the CVD Cu deposition process. They significantly affect both film adhesion and crystal orientation, which are crucial for the use of CVD Cu as interconnect material.
AB - Nucleation and growth behavior of Cu influence strongly the macroscopic properties of the resultant films. In this work the nucleation of CVD Cu on different underlayer materials is studied. It is found that nucleation on bare diffusion barrier surfaces leads to island growth and, therefore, bad wetting and adhesion. An enrichment of F, O and carbon was found at the interface between the CVD Cu film and the diffusion barrier. However CVD Cu deposited on top of Ta with a 200-angstroms PVD Cu layer on top results in good wetting. CVD Cu films grown on a PVD Cu layer expose a highly preferred 〈111〉 orientation. In this case SIMS analysis reveals a comparably low concentration of oxygen, carbon and flourine at the interface region between the CVD Cu and the barrier. These observations shed light on relevance of surface conditions for the CVD Cu deposition process. They significantly affect both film adhesion and crystal orientation, which are crucial for the use of CVD Cu as interconnect material.
UR - http://www.scopus.com/inward/record.url?scp=0343396334&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(99)00305-6
DO - 10.1016/S0167-9317(99)00305-6
M3 - 会议文章
AN - SCOPUS:0343396334
SN - 0167-9317
VL - 50
SP - 375
EP - 381
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
T2 - Proceedings of the 1999 3rd Eropean Workshop on Materials for Advanced Metallization (MAM'99)
Y2 - 7 March 1999 through 10 March 1999
ER -