Influence of Annealing Temperature on CZTS Thin Film Surface Properties

TY - JOUR

T1 - Influence of Annealing Temperature on CZTS Thin Film Surface Properties

AU - Feng, Wenmei

AU - Han, Junfeng

AU - Ge, Jun

AU - Peng, Xianglin

AU - Liu, Yunong

AU - Jian, Yu

AU - Yuan, Lin

AU - Xiong, Xiaolu

AU - Cha, Limei

AU - Liao, Cheng

N1 - Publisher Copyright: © 2016, The Minerals, Metals & Materials Society.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this work, copper zinc tin sulfide (CZTS) films were deposited by direct current sputtering and the samples were annealed in different oven-set temperatures and atmosphere (Ar and H2S). The surface evolution was investigated carefully by using scanning electron microscopy (SEM), Raman spectroscopy and x-ray photoelectron spectroscopy. The surface of the as-sputtered precursor contained little Cu and large amounts of Zn and Sn. The metallic precursor was continuous and compact without pinholes or cracks. With the increase of the temperature from room temperature to 250°C, Cu atoms diffused to the film surface to form Cu1−xS and covered other compounds. Some small platelets were smaller than 500 nm spreading randomly in the holes of the film surfaces. When the temperature reached 350°C, Zn and Sn atoms began to diffuse to the surface and react with S or Cu1−xS. At 400°C, SEM showed the melting of large particles and small particles with a size from 100 nm to 200 nm in the background of the film surface. Excess Zn segregated towards the surface regions and formed ZnS phase on the surface. In addition, the signal of sodium in the CZTS surface was observed above 400°C. At 600°C, a large amount of regular structures with clear edges and corners were observed in the film surface in SEM images. A clear recrystallized process on the surface was assumed from those observations.

AB - In this work, copper zinc tin sulfide (CZTS) films were deposited by direct current sputtering and the samples were annealed in different oven-set temperatures and atmosphere (Ar and H2S). The surface evolution was investigated carefully by using scanning electron microscopy (SEM), Raman spectroscopy and x-ray photoelectron spectroscopy. The surface of the as-sputtered precursor contained little Cu and large amounts of Zn and Sn. The metallic precursor was continuous and compact without pinholes or cracks. With the increase of the temperature from room temperature to 250°C, Cu atoms diffused to the film surface to form Cu1−xS and covered other compounds. Some small platelets were smaller than 500 nm spreading randomly in the holes of the film surfaces. When the temperature reached 350°C, Zn and Sn atoms began to diffuse to the surface and react with S or Cu1−xS. At 400°C, SEM showed the melting of large particles and small particles with a size from 100 nm to 200 nm in the background of the film surface. Excess Zn segregated towards the surface regions and formed ZnS phase on the surface. In addition, the signal of sodium in the CZTS surface was observed above 400°C. At 600°C, a large amount of regular structures with clear edges and corners were observed in the film surface in SEM images. A clear recrystallized process on the surface was assumed from those observations.

KW - CZTS thin films

KW - XPS

KW - raman

KW - sputtering

KW - surface

UR - http://www.scopus.com/inward/record.url?scp=84984861476&partnerID=8YFLogxK

U2 - 10.1007/s11664-016-4873-y

DO - 10.1007/s11664-016-4873-y

M3 - 文章

AN - SCOPUS:84984861476

SN - 0361-5235

VL - 46

SP - 288

EP - 295

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 1

ER -