Inelastic electron tunneling spectroscopy study of ultrathin Al2 O3-TiO2 dielectric stack on Si

Zuoguang Liu; Sharon Cui; Lior Kornblum; Moshe Eizenberg; Ming Feng Chang; T. P. Ma

doi:10.1063/1.3518478

Inelastic electron tunneling spectroscopy study of ultrathin Al₂ O₃-TiO₂ dielectric stack on Si

Zuoguang Liu^*, Sharon Cui, Lior Kornblum, Moshe Eizenberg, Ming Feng Chang, T. P. Ma

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We report the properties of an ultrathin Al₂ O ₃-TiO₂ dielectric stack with the equivalent-oxide thickness =1.0 nm. The stack exhibits nondiscernable interfacial layer on Si, and absence of serious Al₂ O₃-TiO₂ intermixing. Inelastic electron tunneling spectroscopy (IETS) has been used to provide a wealth of information concerning the phonons, bonding vibration modes, and traps in the Al₂ O₃-TiO₂ gate dielectric stack as well as its interfaces in a metal-oxide-Si structure. The IETS spectra before and after forming gas annealing suggest that the reduction of traps is related to the formation of Si-H bonds at the oxide-Si interface.

Original language	English
Article number	202905
Journal	Applied Physics Letters
Volume	97
Issue number	20
DOIs	https://doi.org/10.1063/1.3518478
State	Published - 15 Nov 2010
Externally published	Yes

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title = "Inelastic electron tunneling spectroscopy study of ultrathin Al2 O3-TiO2 dielectric stack on Si",

abstract = "We report the properties of an ultrathin Al2 O 3-TiO2 dielectric stack with the equivalent-oxide thickness =1.0 nm. The stack exhibits nondiscernable interfacial layer on Si, and absence of serious Al2 O3-TiO2 intermixing. Inelastic electron tunneling spectroscopy (IETS) has been used to provide a wealth of information concerning the phonons, bonding vibration modes, and traps in the Al2 O3-TiO2 gate dielectric stack as well as its interfaces in a metal-oxide-Si structure. The IETS spectra before and after forming gas annealing suggest that the reduction of traps is related to the formation of Si-H bonds at the oxide-Si interface.",

author = "Zuoguang Liu and Sharon Cui and Lior Kornblum and Moshe Eizenberg and Chang, {Ming Feng} and Ma, {T. P.}",

note = "Funding Information: This work was partly supported by the Semiconductor Research Corporation, by the National Science Foundation under Contract No. MRSEC DMR 0520495, and by the Defense Threat Reduction Agency under Contract No. HDTRA1-08-10-BRCWMD.",

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doi = "10.1063/1.3518478",

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volume = "97",

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T1 - Inelastic electron tunneling spectroscopy study of ultrathin Al2 O3-TiO2 dielectric stack on Si

AU - Liu, Zuoguang

AU - Cui, Sharon

AU - Kornblum, Lior

AU - Eizenberg, Moshe

AU - Chang, Ming Feng

AU - Ma, T. P.

N1 - Funding Information: This work was partly supported by the Semiconductor Research Corporation, by the National Science Foundation under Contract No. MRSEC DMR 0520495, and by the Defense Threat Reduction Agency under Contract No. HDTRA1-08-10-BRCWMD.

PY - 2010/11/15

Y1 - 2010/11/15

N2 - We report the properties of an ultrathin Al2 O 3-TiO2 dielectric stack with the equivalent-oxide thickness =1.0 nm. The stack exhibits nondiscernable interfacial layer on Si, and absence of serious Al2 O3-TiO2 intermixing. Inelastic electron tunneling spectroscopy (IETS) has been used to provide a wealth of information concerning the phonons, bonding vibration modes, and traps in the Al2 O3-TiO2 gate dielectric stack as well as its interfaces in a metal-oxide-Si structure. The IETS spectra before and after forming gas annealing suggest that the reduction of traps is related to the formation of Si-H bonds at the oxide-Si interface.

AB - We report the properties of an ultrathin Al2 O 3-TiO2 dielectric stack with the equivalent-oxide thickness =1.0 nm. The stack exhibits nondiscernable interfacial layer on Si, and absence of serious Al2 O3-TiO2 intermixing. Inelastic electron tunneling spectroscopy (IETS) has been used to provide a wealth of information concerning the phonons, bonding vibration modes, and traps in the Al2 O3-TiO2 gate dielectric stack as well as its interfaces in a metal-oxide-Si structure. The IETS spectra before and after forming gas annealing suggest that the reduction of traps is related to the formation of Si-H bonds at the oxide-Si interface.

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U2 - 10.1063/1.3518478

DO - 10.1063/1.3518478

M3 - 文章

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Inelastic electron tunneling spectroscopy study of ultrathin Al₂ O₃-TiO₂ dielectric stack on Si

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