Indium outdiffusion and leakage degradation in metal/Al2O 3/In0.53Ga0.47As capacitors

Igor Krylov; Arkady Gavrilov; Moshe Eizenberg; Dan Ritter

doi:10.1063/1.4816588

Indium outdiffusion and leakage degradation in metal/Al₂O ₃/In_0.53Ga_0.47As capacitors

Igor Krylov, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

Annealing of Ni/Al₂O₃/InGaAs structures results in a significant increase of the leakage current. The same treatment of Au/Ti/Al ₂O₃/InGaAs structures results in a slight increase in leakage only. Time of flight secondary ions mass spectrometry measurements detected an annealing induced indium outdiffusion into the dielectric layer. In structures having nickel metallization, the released indium accumulated at the Ni/Al₂O₃ interface. In structures having Au/Ti metallization, the indium atoms penetrated into the gold layer, and an indium free Al₂O₃ layer was observed. We attribute the observed different electrical behavior to the different indium diffusion behavior, and eliminate other explanations.

Original language	English
Article number	053502
Journal	Applied Physics Letters
Volume	103
Issue number	5
DOIs	https://doi.org/10.1063/1.4816588
State	Published - 29 Jul 2013
Externally published	Yes

Access to Document

10.1063/1.4816588

Cite this

@article{d6b5b3036a1d4f9d9378b50c339cdcdb,

title = "Indium outdiffusion and leakage degradation in metal/Al2O 3/In0.53Ga0.47As capacitors",

abstract = "Annealing of Ni/Al2O3/InGaAs structures results in a significant increase of the leakage current. The same treatment of Au/Ti/Al 2O3/InGaAs structures results in a slight increase in leakage only. Time of flight secondary ions mass spectrometry measurements detected an annealing induced indium outdiffusion into the dielectric layer. In structures having nickel metallization, the released indium accumulated at the Ni/Al2O3 interface. In structures having Au/Ti metallization, the indium atoms penetrated into the gold layer, and an indium free Al2O3 layer was observed. We attribute the observed different electrical behavior to the different indium diffusion behavior, and eliminate other explanations.",

author = "Igor Krylov and Arkady Gavrilov and Moshe Eizenberg and Dan Ritter",

note = "Funding Information: The authors acknowledge the Russell Berrie Nanotechnology Institute (RBNI) at the Technion for financial support, Mrs. Catherine Cytermann for help with TOF-SIMS measurements, and Dr. Yaron Kauffmann for help with HRTEM measurements.",

year = "2013",

month = jul,

day = "29",

doi = "10.1063/1.4816588",

language = "英语",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Indium outdiffusion and leakage degradation in metal/Al2O 3/In0.53Ga0.47As capacitors

AU - Krylov, Igor

AU - Gavrilov, Arkady

AU - Eizenberg, Moshe

AU - Ritter, Dan

N1 - Funding Information: The authors acknowledge the Russell Berrie Nanotechnology Institute (RBNI) at the Technion for financial support, Mrs. Catherine Cytermann for help with TOF-SIMS measurements, and Dr. Yaron Kauffmann for help with HRTEM measurements.

PY - 2013/7/29

Y1 - 2013/7/29

N2 - Annealing of Ni/Al2O3/InGaAs structures results in a significant increase of the leakage current. The same treatment of Au/Ti/Al 2O3/InGaAs structures results in a slight increase in leakage only. Time of flight secondary ions mass spectrometry measurements detected an annealing induced indium outdiffusion into the dielectric layer. In structures having nickel metallization, the released indium accumulated at the Ni/Al2O3 interface. In structures having Au/Ti metallization, the indium atoms penetrated into the gold layer, and an indium free Al2O3 layer was observed. We attribute the observed different electrical behavior to the different indium diffusion behavior, and eliminate other explanations.

AB - Annealing of Ni/Al2O3/InGaAs structures results in a significant increase of the leakage current. The same treatment of Au/Ti/Al 2O3/InGaAs structures results in a slight increase in leakage only. Time of flight secondary ions mass spectrometry measurements detected an annealing induced indium outdiffusion into the dielectric layer. In structures having nickel metallization, the released indium accumulated at the Ni/Al2O3 interface. In structures having Au/Ti metallization, the indium atoms penetrated into the gold layer, and an indium free Al2O3 layer was observed. We attribute the observed different electrical behavior to the different indium diffusion behavior, and eliminate other explanations.

UR - http://www.scopus.com/inward/record.url?scp=84882393257&partnerID=8YFLogxK

U2 - 10.1063/1.4816588

DO - 10.1063/1.4816588

M3 - 文章

AN - SCOPUS:84882393257

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 053502

ER -

Indium outdiffusion and leakage degradation in metal/Al₂O ₃/In_0.53Ga_0.47As capacitors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this