Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures

Shlomo Mehari; Arkady Gavrilov; Moshe Eizenberg; Dan Ritter

doi:10.1109/TED.2017.2661960

Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures

Shlomo Mehari, Arkady Gavrilov, Moshe Eizenberg, Dan Ritter

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present a methodology, based on gated van der Pauw measurements, to identify the electron trap charging or discharging energy at different spatial locations in AlGaN/GaN heterostructures. The slow transient response of the 2-D electron gas concentration was recorded following different Schottky gate and substrate voltage pulses and at different temperatures. While recovering from a gate voltage stress, both trapping and detrapping processes are observed at different times and temperatures, demonstrating that dynamic rather than quasi-equilibrium considerations should be invoked to explain the data. Several distinct electron traps were identified, three traps located in the GaN buffer layer having detrapping activation energies of about 0.55, 0.45, and 0.21 eV, and an activation energy of about 0.64 eV was associated with trapping processes in the AlGaN barrier layer.

Original language	English
Article number	7857677
Pages (from-to)	1642-1646
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	4
DOIs	https://doi.org/10.1109/TED.2017.2661960
State	Published - Apr 2017
Externally published	Yes

Keywords

Electron trapping effects
GaN
Gated hall
Heterostructure FETs (HFETs)
High power
Transient response

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10.1109/TED.2017.2661960

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@article{3deb475323b146a49bbf936f323bbb0e,

title = "Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures",

abstract = "We present a methodology, based on gated van der Pauw measurements, to identify the electron trap charging or discharging energy at different spatial locations in AlGaN/GaN heterostructures. The slow transient response of the 2-D electron gas concentration was recorded following different Schottky gate and substrate voltage pulses and at different temperatures. While recovering from a gate voltage stress, both trapping and detrapping processes are observed at different times and temperatures, demonstrating that dynamic rather than quasi-equilibrium considerations should be invoked to explain the data. Several distinct electron traps were identified, three traps located in the GaN buffer layer having detrapping activation energies of about 0.55, 0.45, and 0.21 eV, and an activation energy of about 0.64 eV was associated with trapping processes in the AlGaN barrier layer.",

keywords = "Electron trapping effects, GaN, Gated hall, Heterostructure FETs (HFETs), High power, Transient response",

author = "Shlomo Mehari and Arkady Gavrilov and Moshe Eizenberg and Dan Ritter",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = apr,

doi = "10.1109/TED.2017.2661960",

language = "英语",

volume = "64",

pages = "1642--1646",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures

AU - Mehari, Shlomo

AU - Gavrilov, Arkady

AU - Eizenberg, Moshe

AU - Ritter, Dan

PY - 2017/4

Y1 - 2017/4

N2 - We present a methodology, based on gated van der Pauw measurements, to identify the electron trap charging or discharging energy at different spatial locations in AlGaN/GaN heterostructures. The slow transient response of the 2-D electron gas concentration was recorded following different Schottky gate and substrate voltage pulses and at different temperatures. While recovering from a gate voltage stress, both trapping and detrapping processes are observed at different times and temperatures, demonstrating that dynamic rather than quasi-equilibrium considerations should be invoked to explain the data. Several distinct electron traps were identified, three traps located in the GaN buffer layer having detrapping activation energies of about 0.55, 0.45, and 0.21 eV, and an activation energy of about 0.64 eV was associated with trapping processes in the AlGaN barrier layer.

AB - We present a methodology, based on gated van der Pauw measurements, to identify the electron trap charging or discharging energy at different spatial locations in AlGaN/GaN heterostructures. The slow transient response of the 2-D electron gas concentration was recorded following different Schottky gate and substrate voltage pulses and at different temperatures. While recovering from a gate voltage stress, both trapping and detrapping processes are observed at different times and temperatures, demonstrating that dynamic rather than quasi-equilibrium considerations should be invoked to explain the data. Several distinct electron traps were identified, three traps located in the GaN buffer layer having detrapping activation energies of about 0.55, 0.45, and 0.21 eV, and an activation energy of about 0.64 eV was associated with trapping processes in the AlGaN barrier layer.

KW - Electron trapping effects

KW - GaN

KW - Gated hall

KW - Heterostructure FETs (HFETs)

KW - High power

KW - Transient response

UR - http://www.scopus.com/inward/record.url?scp=85013249650&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2661960

DO - 10.1109/TED.2017.2661960

M3 - 文章

AN - SCOPUS:85013249650

SN - 0018-9383

VL - 64

SP - 1642

EP - 1646

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 7857677

ER -

Identification of Energy and Spatial Location of Electron Traps in AlGaN/GaN HFET Structures

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Keywords

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