@inproceedings{f94e943a986c48538025f5c92c8cc37e,
title = "Gated van der Pauw measurements: A powerful tool for probing electron trapping effects in GaN HEMTs",
abstract = "Gated van der Pauw structures can be used to distinguish between different trapping effects in AlGaN/GaN HEMT layers, and evaluate trap density. Activation energies can also be obtained [2]. The absence of transistor access region effects greatly simplifies the interpretation of the data compared to transistor pulsed I-V experiments.",
keywords = "Aluminum gallium nitride, Charge carrier processes, Gallium nitride, HEMTs, Logic gates, MODFETs, Transient analysis",
author = "Shlomo Mehari and Arkady Gavrilov and Moshe Eizenberg and Dan Ritter",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175587",
language = "英语",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "125--126",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
address = "United States",
}