Formation of shallow silicide contacts of high Schottky barrier on Si: Alloying Pd and Pt with W versus alloying Pd and Pt with Si

M. Eizenberg; K. N. Tu

doi:10.1063/1.330660

Formation of shallow silicide contacts of high Schottky barrier on Si: Alloying Pd and Pt with W versus alloying Pd and Pt with Si

M. Eizenberg^*, K. N. Tu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

The contact reaction of a Si substrate with codeposited Pd-W and Pt-W alloy films has been compared to that with codeposited Pd-Si and Pt-Si alloy films. Effects of alloy composition and heat treatment on component redistribution, reaction product, temperature of silicide formation, and morphological changes have been analyzed by ion backscattering, x-ray diffraction, and scanning electron microscopy and correlated with earlier current-voltage measurements of change of Schottky barrier height. The advantage and disadvantage of using alloys of near noble and refractory metals and of using alloys of near noble metal and Si for the formation of shallow contacts of high Schottky barrier height (0.87-0.74 eV) are reviewed.

Original language	English
Pages (from-to)	1577-1585
Number of pages	9
Journal	Journal of Applied Physics
Volume	53
Issue number	3
DOIs	https://doi.org/10.1063/1.330660
State	Published - 1982
Externally published	Yes

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abstract = "The contact reaction of a Si substrate with codeposited Pd-W and Pt-W alloy films has been compared to that with codeposited Pd-Si and Pt-Si alloy films. Effects of alloy composition and heat treatment on component redistribution, reaction product, temperature of silicide formation, and morphological changes have been analyzed by ion backscattering, x-ray diffraction, and scanning electron microscopy and correlated with earlier current-voltage measurements of change of Schottky barrier height. The advantage and disadvantage of using alloys of near noble and refractory metals and of using alloys of near noble metal and Si for the formation of shallow contacts of high Schottky barrier height (0.87-0.74 eV) are reviewed.",

author = "M. Eizenberg and Tu, {K. N.}",

year = "1982",

doi = "10.1063/1.330660",

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journal = "Journal of Applied Physics",

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T1 - Formation of shallow silicide contacts of high Schottky barrier on Si

T2 - Alloying Pd and Pt with W versus alloying Pd and Pt with Si

AU - Eizenberg, M.

AU - Tu, K. N.

PY - 1982

Y1 - 1982

N2 - The contact reaction of a Si substrate with codeposited Pd-W and Pt-W alloy films has been compared to that with codeposited Pd-Si and Pt-Si alloy films. Effects of alloy composition and heat treatment on component redistribution, reaction product, temperature of silicide formation, and morphological changes have been analyzed by ion backscattering, x-ray diffraction, and scanning electron microscopy and correlated with earlier current-voltage measurements of change of Schottky barrier height. The advantage and disadvantage of using alloys of near noble and refractory metals and of using alloys of near noble metal and Si for the formation of shallow contacts of high Schottky barrier height (0.87-0.74 eV) are reviewed.

AB - The contact reaction of a Si substrate with codeposited Pd-W and Pt-W alloy films has been compared to that with codeposited Pd-Si and Pt-Si alloy films. Effects of alloy composition and heat treatment on component redistribution, reaction product, temperature of silicide formation, and morphological changes have been analyzed by ion backscattering, x-ray diffraction, and scanning electron microscopy and correlated with earlier current-voltage measurements of change of Schottky barrier height. The advantage and disadvantage of using alloys of near noble and refractory metals and of using alloys of near noble metal and Si for the formation of shallow contacts of high Schottky barrier height (0.87-0.74 eV) are reviewed.

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JO - Journal of Applied Physics

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ER -

Formation of shallow silicide contacts of high Schottky barrier on Si: Alloying Pd and Pt with W versus alloying Pd and Pt with Si

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