Factors which determine the orientation of CVD Al films grown on TiN

M. Avinun; W. D. Kaplan; M. Eizenberg; T. Guo; R. Mosely

doi:10.1016/S0038-1101(99)00016-7

Factors which determine the orientation of CVD Al films grown on TiN

M. Avinun^*, W. D. Kaplan, M. Eizenberg, T. Guo, R. Mosely

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

CVD Al deposited on a TiN/Ti liner followed by `warm' PVD Al (Cu) is a promising approach for filling high aspect ratio vias. A highly (111) textured finn is important to achieve high electromigration resistivity. The dependence of the Al orientation on the type of the underlying TiN liner and the mechanism responsible for this effect were investigated. HRTEM was used to characterize the structure of the Al grains (after 1 s of deposition), through to a continuous film, as well as the structure of the interface of thick Al films with TiN. The microscopy results helped to explain the X-ray diffraction observations that on PVD TiN the Al film had a stronger (111) texture than on other TiN types. This is attributed to it topotaxial relationship, which forms during the nucleation stage of the CVD Al.

Original language	English
Pages (from-to)	1011-1014
Number of pages	4
Journal	Solid-State Electronics
Volume	43
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(99)00016-7
State	Published - Jun 1999
Externally published	Yes
Event	Proceedings of the 1998 European Materials Research Society Meeting. Symposium N: Materials and Processes for Submicron Technologies / E-MRS Spring Meeting - Strasbourg Duration: 16 Jun 1998 → 19 Jun 1998

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title = "Factors which determine the orientation of CVD Al films grown on TiN",

abstract = "CVD Al deposited on a TiN/Ti liner followed by `warm' PVD Al (Cu) is a promising approach for filling high aspect ratio vias. A highly (111) textured finn is important to achieve high electromigration resistivity. The dependence of the Al orientation on the type of the underlying TiN liner and the mechanism responsible for this effect were investigated. HRTEM was used to characterize the structure of the Al grains (after 1 s of deposition), through to a continuous film, as well as the structure of the interface of thick Al films with TiN. The microscopy results helped to explain the X-ray diffraction observations that on PVD TiN the Al film had a stronger (111) texture than on other TiN types. This is attributed to it topotaxial relationship, which forms during the nucleation stage of the CVD Al.",

author = "M. Avinun and Kaplan, {W. D.} and M. Eizenberg and T. Guo and R. Mosely",

note = "Funding Information: MA acknowledges the Israel Ministry of Science for financial support.; Proceedings of the 1998 European Materials Research Society Meeting. Symposium N: Materials and Processes for Submicron Technologies / E-MRS Spring Meeting ; Conference date: 16-06-1998 Through 19-06-1998",

year = "1999",

month = jun,

doi = "10.1016/S0038-1101(99)00016-7",

language = "英语",

volume = "43",

pages = "1011--1014",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Factors which determine the orientation of CVD Al films grown on TiN

AU - Avinun, M.

AU - Kaplan, W. D.

AU - Eizenberg, M.

AU - Guo, T.

AU - Mosely, R.

N1 - Funding Information: MA acknowledges the Israel Ministry of Science for financial support.

PY - 1999/6

Y1 - 1999/6

N2 - CVD Al deposited on a TiN/Ti liner followed by `warm' PVD Al (Cu) is a promising approach for filling high aspect ratio vias. A highly (111) textured finn is important to achieve high electromigration resistivity. The dependence of the Al orientation on the type of the underlying TiN liner and the mechanism responsible for this effect were investigated. HRTEM was used to characterize the structure of the Al grains (after 1 s of deposition), through to a continuous film, as well as the structure of the interface of thick Al films with TiN. The microscopy results helped to explain the X-ray diffraction observations that on PVD TiN the Al film had a stronger (111) texture than on other TiN types. This is attributed to it topotaxial relationship, which forms during the nucleation stage of the CVD Al.

AB - CVD Al deposited on a TiN/Ti liner followed by `warm' PVD Al (Cu) is a promising approach for filling high aspect ratio vias. A highly (111) textured finn is important to achieve high electromigration resistivity. The dependence of the Al orientation on the type of the underlying TiN liner and the mechanism responsible for this effect were investigated. HRTEM was used to characterize the structure of the Al grains (after 1 s of deposition), through to a continuous film, as well as the structure of the interface of thick Al films with TiN. The microscopy results helped to explain the X-ray diffraction observations that on PVD TiN the Al film had a stronger (111) texture than on other TiN types. This is attributed to it topotaxial relationship, which forms during the nucleation stage of the CVD Al.

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U2 - 10.1016/S0038-1101(99)00016-7

DO - 10.1016/S0038-1101(99)00016-7

M3 - 会议文章

AN - SCOPUS:0032656644

SN - 0038-1101

VL - 43

SP - 1011

EP - 1014

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

T2 - Proceedings of the 1998 European Materials Research Society Meeting. Symposium N: Materials and Processes for Submicron Technologies / E-MRS Spring Meeting

Y2 - 16 June 1998 through 19 June 1998

ER -

Factors which determine the orientation of CVD Al films grown on TiN

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