Abstract
Temperature dependent capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to obtain activation energies (E A) for weak inversion C-V humps and parallel conductance peaks in Al 2O 3/InGaAs and Si 3N 4/InGaAs gate stacks. Values of 0.48 eV (slightly more than half of the band gap of the studied In 0.53Ga 0.47As) were obtained for E A of both phenomena for both gate dielectrics studied. This indicates an universal InGaAs behavior and shows that both phenomena are due to generation- recombination of minority carriers through near midgap located interface states. The C-V hump correlates with the interface states density (D it) and can be used as a characterization tool for dielectric/InGaAs systems.
Original language | English |
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Article number | 173508 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 17 |
DOIs | |
State | Published - 23 Apr 2012 |
Externally published | Yes |