Epitaxial regrowth of Sb implanted Si1-xGex alloy layers

Z. Atzmon; M. Eizenberg; P. Revesz; J. W. Mayer; S. Q. Hong; F. Schäffler

doi:10.1063/1.107043

Epitaxial regrowth of Sb implanted Si_1-xGe_x alloy layers

Z. Atzmon^*, M. Eizenberg, P. Revesz, J. W. Mayer, S. Q. Hong, F. Schäffler

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Solid phase epitaxial regrowth of Sb implanted strained Si _1-xGe_x alloy layers is reported. A set of Si _0.92Ge_0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb⁺ ions at an energy of 200 keV and a dose of 10¹⁵ ions/cm². These alloys were annealed in a RTA system at temperatures of 525, 550, and 575°C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.

Original language	English
Pages (from-to)	2243-2245
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	18
DOIs	https://doi.org/10.1063/1.107043
State	Published - 1992
Externally published	Yes

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title = "Epitaxial regrowth of Sb implanted Si1-xGex alloy layers",

abstract = "Solid phase epitaxial regrowth of Sb implanted strained Si 1-xGex alloy layers is reported. A set of Si 0.92Ge0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at an energy of 200 keV and a dose of 1015 ions/cm2. These alloys were annealed in a RTA system at temperatures of 525, 550, and 575°C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.",

author = "Z. Atzmon and M. Eizenberg and P. Revesz and Mayer, {J. W.} and Hong, {S. Q.} and F. Sch{\"a}ffler",

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T1 - Epitaxial regrowth of Sb implanted Si1-xGex alloy layers

AU - Atzmon, Z.

AU - Eizenberg, M.

AU - Revesz, P.

AU - Mayer, J. W.

AU - Hong, S. Q.

AU - Schäffler, F.

PY - 1992

Y1 - 1992

N2 - Solid phase epitaxial regrowth of Sb implanted strained Si 1-xGex alloy layers is reported. A set of Si 0.92Ge0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at an energy of 200 keV and a dose of 1015 ions/cm2. These alloys were annealed in a RTA system at temperatures of 525, 550, and 575°C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.

AB - Solid phase epitaxial regrowth of Sb implanted strained Si 1-xGex alloy layers is reported. A set of Si 0.92Ge0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at an energy of 200 keV and a dose of 1015 ions/cm2. These alloys were annealed in a RTA system at temperatures of 525, 550, and 575°C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.

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Epitaxial regrowth of Sb implanted Si_1-xGe_x alloy layers

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